| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,815 pcs
|
14815 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
3,479 pcs
|
3479 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD25302Q2 is a P-Channel NexFET Power MOSFET from Texas Instruments designed for space-constrained battery-operated applications. It features a drain-source voltage of 20V, continuous drain current of 5A (at Tc=25°C), and a maximum on-resistance of 49 mΩ at Vgs=4.5V and Id=3A. The gate threshold voltage is typically 0.65V with a maximum of 0.9V at 250 µA. The device offers low gate charge (2.6 nC typical at 4.5V) and low input capacitance (350 pF at Vds=10V), enabling efficient switching. It is rated for operating junction temperatures from -55°C to 150°C. The MOSFET is housed in a 6-SMD flat leads package (6-SON) with surface mount mounting, making it suitable for compact designs. The device is RoHS compliant, halogen free, and lead-free, with an MSL rating of 1 (unlimited). Typical applications include battery management, load management, and battery protection circuits.
20V.
6-SMD, Flat Leads (6-SON).
-55°C to 150°C (junction).
Yes, RoHS3 compliant, halogen free, and lead-free (Pb free terminal plating).
Maximum 3.4 nC at 4.5V, typical 2.6 nC.
5A at Tc=25°C.
Maximum 49 mΩ at 3A, 4.5V.