CSD25302Q2 P-Channel NexFET Power MOSFET, 20V drain-source voltage, 5A continuous drain current, 49 mΩ on-resistance at 4.5V, surface mount 6-SON package.
Mfr Part #:

CSD25302Q2

Available from 2 distributors
Mfr Name: Texas Instruments
Texas Instruments
P-Channel NexFET Power MOSFET, 20V drain-source voltage, 5A continuous drain current, 49 mΩ on-resistance at 4.5V, surface mount 6-SON package.
✓ Total Stock: 18,294 pcs

CSD25302Q2 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
14,815 pcs
14815 pcs On Request 1 On Request On Request 12+ On Request On Request
Non-Authorised Inventory information
3,479 pcs
3479 pcs On Request 1 On Request On Request 12+ On Request On Request

CSD25302Q2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package / Case
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD25302Q2 Description

Short technical summary and product information.

The CSD25302Q2 is a P-Channel NexFET Power MOSFET from Texas Instruments designed for space-constrained battery-operated applications. It features a drain-source voltage of 20V, continuous drain current of 5A (at Tc=25°C), and a maximum on-resistance of 49 mΩ at Vgs=4.5V and Id=3A. The gate threshold voltage is typically 0.65V with a maximum of 0.9V at 250 µA. The device offers low gate charge (2.6 nC typical at 4.5V) and low input capacitance (350 pF at Vds=10V), enabling efficient switching. It is rated for operating junction temperatures from -55°C to 150°C. The MOSFET is housed in a 6-SMD flat leads package (6-SON) with surface mount mounting, making it suitable for compact designs. The device is RoHS compliant, halogen free, and lead-free, with an MSL rating of 1 (unlimited). Typical applications include battery management, load management, and battery protection circuits.

CSD25302Q2 Quick Information

Product Type: MOSFET
Series: NexFET
Canonical Name: CSD25302Q2 P-Channel NexFET Power MOSFET
Subcategory: P-Channel MOSFET

CSD25302Q2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

CSD25302Q2 Features

  • P-Channel NexFET Power MOSFET technology.
  • Low on-resistance: 49 mΩ at 4.5V.
  • Low gate charge: 2.6 nC typical.
  • Surface mount 6-SON package.
  • RoHS compliant and halogen free.

CSD25302Q2 Applications

  • Ideal for battery management circuits.
  • Used in load management applications.
  • Suitable for battery protection systems.
  • Can be used in power management designs.

CSD25302Q2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the CSD25302Q2?

20V.

What package does the CSD25302Q2 come in?

6-SMD, Flat Leads (6-SON).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the CSD25302Q2 RoHS compliant?

Yes, RoHS3 compliant, halogen free, and lead-free (Pb free terminal plating).

What is the gate charge of the CSD25302Q2?

Maximum 3.4 nC at 4.5V, typical 2.6 nC.

What is the continuous drain current rating?

5A at Tc=25°C.

What is the on-resistance at 4.5V?

Maximum 49 mΩ at 3A, 4.5V.

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