| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,234 pcs
|
5234 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD25211W1015 is a P-channel enhancement-mode NexFET power MOSFET from Texas Instruments. It features a drain-source voltage of -20V and a maximum continuous drain current of 3.2A at 25°C. The device offers an ultra-low on-resistance of 33mΩ at Vgs=4.5V and 44mΩ at Vgs=2.5V, enabling efficient power switching in space-constrained applications.
The MOSFET integrates gate ESD protection up to 3kV and is logic level compatible, allowing direct drive from low-voltage controllers. Total gate charge is typically 3.4nC, with gate-drain charge of 0.2nC and gate-source charge of 1.1nC, supporting fast switching.
Packaged in a 6-DSBGA (1.0mm x 1.5mm) with a height of 0.62mm, this device is suitable for compact portable electronics. It operates over a junction temperature range of -55°C to 150°C and is Pb-free and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
| 10+ | $0.61 | $0.61 |
| 100+ | $0.40 | $0.40 |
| 500+ | $0.34 | $0.34 |
| 1,000+ | $0.29 | $0.29 |
| 3,000+ | $0.20 | $0.20 |
| 6,000+ | $0.19 | $0.19 |
| 9,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is -20V (P-channel).
Maximum continuous drain current is 3.2A at 25°C (ambient).
On-resistance is 33mΩ maximum at Vgs=4.5V (Id=1.5A) and 44mΩ maximum at Vgs=2.5V.
It comes in a 6-DSBGA package measuring 1.0mm x 1.5mm with a height of 0.62mm.
The junction operating temperature range is -55°C to 150°C.
The device is marked as RoHS3 compliant (unverified from source data). It is confirmed Pb-free and halogen-free by the manufacturer.
Yes, it includes gate ESD protection rated at 3kV.