CSD23381F4

The CSD23381F4 is a P-Channel NexFET power MOSFET from Texas Instruments, designed for space-constrained applications. It features a maximum drain-to-source voltage of 12V and a continuous drain current of 2.3A (silicon limited at TC=25°C). The device offers low on-resistance: 175mΩ max at VGS=4.5V (500mA) and 300mΩ max at VGS=2.5V, enabling efficient power switching. Gate threshold voltage is typically -0.95V, and the device is logic level compatible, allowing direct drive from low-voltage logic. Total gate charge is typically 1.14nC with low gate-drain charge (0.19nC) for fast switching. Integrated ESD protection diodes provide ratings of >4kV HBM and >2kV CDM. The MOSFET is housed in a 3-PICOSTAR package (3-XFDFN) with dimensions 1.0mm x 0.6mm and a maximum height of 0.36mm, equivalent to a 0402 case size. It is surface mount and operates over a temperature range of -55°C to 150°C. The device is RoHS3 compliant, REACH unaffected, lead free, and halogen free. According to the manufacturer, this FemtoFET technology reduces footprint by at least 60% compared to standard small signal MOSFETs, making it ideal for handheld and mobile applications where board space is critical.