CSD23285F5 P-Channel MOSFET with -12V drain-source voltage and 5.4A continuous drain current. Features low on-resistance of 35mΩ at 4.5V gate drive and ultra-small 3-PICOSTAR package.
Mfr Part #:

CSD23285F5

Available from 4 distributors
Mfr Name: Texas Instruments
Texas Instruments
P-Channel MOSFET with -12V drain-source voltage and 5.4A continuous drain current. Features low on-resistance of 35mΩ at 4.5V gate drive and ultra-small 3-PICOSTAR package.
✓ Total Stock: 350,757 pcs
$ Price Range: $0.13 - $1.09

CSD23285F5 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

CSD23285F5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD23285F5 Description

Short technical summary and product information.

The CSD23285F5 is a -12V P-Channel FemtoFET MOSFET from Texas Instruments, designed for space-constrained applications. It offers a maximum drain current of 5.4A at ambient temperature and 3.3A at TC=25°C (silicon limited). The device features low on-resistance: 35mΩ maximum at VGS=4.5V and 47mΩ at VGS=2.5V.

 

Key electrical characteristics include a typical gate threshold voltage of -0.65V, low gate charge (3.2nC typical), and integrated ESD protection rated >4kV HBM and >2kV CDM. The logic-level gate drive allows operation with low-voltage control signals.

 

The MOSFET is housed in a 3-PICOSTAR package (3-XFDFN) measuring 1.53mm x 0.77mm x 0.36mm with a 0.50mm pad pitch, enabling ultra-small footprint designs. It is surface mount and supports operating temperatures from -55°C to 150°C. The device is RoHS, REACH, lead-free, and halogen-free compliant.

CSD23285F5 Quick Information

Product Type: P-Channel MOSFET
Series: FemtoFET
Canonical Name: CSD23285F5 -12V P-Channel FemtoFET MOSFET
Subcategory: P-Channel MOSFET

CSD23285F5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

CSD23285F5 Estimated Pricing

Qty Low High
1+ $1.09 $1.09
10+ $0.76 $0.76
100+ $0.48 $0.48
500+ $0.30 $0.30
1,000+ $0.22 $0.22
3,000+ $0.19 $0.19
6,000+ $0.17 $0.17
9,000+ $0.15 $0.15
24,000+ $0.13 $0.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD23285F5 Features

  • P-Channel MOSFET with -12V drain-source voltage.
  • Low on-resistance of 35mΩ at 4.5V gate drive.
  • Ultra-small 3-PICOSTAR package for space savings.
  • Integrated ESD protection rated over 4kV HBM.
  • RoHS, REACH, lead-free, and halogen-free compliant.

CSD23285F5 Applications

  • Ideal for load switching in portable devices.
  • Used in battery management and protection circuits.
  • Suitable for power management in IoT modules.
  • Enables efficient DC/DC converter designs.

CSD23285F5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the CSD23285F5?

The maximum drain-source voltage is -12 V.

What package does the CSD23285F5 come in?

It is available in a 3-PICOSTAR (3-XFDFN) package with dimensions 1.53 mm × 0.77 mm × 0.36 mm and 0.50 mm pad pitch.

What is the operating temperature range of the CSD23285F5?

The operating junction temperature range is -55°C to 150°C.

Is the CSD23285F5 RoHS compliant?

Yes, the manufacturer states it is RoHS3 compliant.

What is the maximum drain current of the CSD23285F5?

The maximum drain current is 5.4 A at ambient temperature and 3.3 A at TC=25°C (silicon limited).

What is the on-resistance of the CSD23285F5?

The maximum on-resistance is 35 mΩ at VGS=4.5 V and 47 mΩ at VGS=2.5 V.

Does the CSD23285F5 have ESD protection?

Yes, it is rated >4 kV HBM and >2 kV CDM.

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