| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
35,000 pcs
|
35000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
6,413 pcs
|
6413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,053 pcs
|
4053 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,887 pcs
|
1887 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD23280F3 is a -12V P-Channel NexFET power MOSFET designed by Texas Instruments for ultra-compact applications. This MOSFET uses MOSFET (Metal Oxide) technology and is logic level compatible, allowing direct drive from low-voltage logic. It delivers a maximum drain current of 1.8A at 25°C and features a low on-resistance of 116 mΩ at Vgs=4.5V and 165 mΩ at Vgs=2.5V. The gate charge is typically 0.95 nC, with an input capacitance of 234 pF at Vds=6V, enabling efficient switching at high frequencies. The device is housed in a 3-XFDFN package (3-PICOSTAR) with dimensions of 0.73 mm × 0.64 mm and a maximum height of 0.36 mm, making it among the smallest footprint MOSFETs available. It supports surface mount assembly and operates over a junction temperature range of -55°C to 150°C. Integrated ESD protection diodes rated for >4 kV HBM and >2 kV CDM enhance ruggedness in handling and operation. The part is lead and halogen free and RoHS compliant (unverified). This MOSFET is ideal for space-constrained portable electronics, power management, and load switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.34 | $0.34 |
| 10+ | $0.21 | $0.21 |
| 100+ | $0.13 | $0.13 |
| 500+ | $0.10 | $0.10 |
| 1,000+ | $0.08 | $0.08 |
| 3,000+ | $0.07 | $0.07 |
| 6,000+ | $0.06 | $0.06 |
| 9,000+ | $0.05 | $0.05 |
| 24,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is -12 V (P-channel).
The maximum on-resistance is 116 mΩ at Vgs = 4.5 V and 400 mA, and 165 mΩ at Vgs = 2.5 V.
The maximum drain current is 1.8 A at Ta = 25 °C.
The package is a 3-XFDFN (3-PICOSTAR) with dimensions 0.73 mm × 0.64 mm and maximum height 0.36 mm.
The operating junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.
Yes, it has an integrated ESD protection diode rated for >4 kV HBM and >2 kV CDM.