| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
16 pcs
|
16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD23203WT is a P-Channel MOSFET from Texas Instruments, utilizing Metal Oxide technology for low-voltage switching applications. It is designed for efficient power management and load switching in space-constrained designs.
Key electrical specifications include a maximum drain-source voltage of 8V and a continuous drain current of 3A at 25°C ambient temperature. The device features a low on-resistance of 19.4mOhm at Id = 1.5A and Vgs = 4.5V, minimizing conduction losses. The gate threshold voltage is 1.1V at Id = 250µA, enabling logic-level drive. Gate charge is 6.3nC and input capacitance is 914pF, supporting fast switching transitions.
Thermally, the MOSFET can dissipate up to 750mW at 25°C and operates over a junction temperature range of -55°C to 150°C. It is housed in a 6-UFBGA/DSBGA package with a supplier device package of 6-DSBGA (1x1.5), suitable for surface-mount assembly. The part is RoHS3 compliant and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.77 | $1.77 |
| 10+ | $1.12 | $1.12 |
| 100+ | $0.65 | $0.65 |
| 250+ | $0.65 | $0.65 |
| 500+ | $0.56 | $0.56 |
| 1,000+ | $0.50 | $0.50 |
| 2,500+ | $0.48 | $0.48 |
| 5,000+ | $0.48 | $0.48 |
| 10,000+ | $0.46 | $0.46 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
8 V.
6-UFBGA, DSBGA; supplier device package 6-DSBGA (1x1.5).
-55°C to 150°C (junction).
RoHS3 compliant.
3 A.
19.4 mOhm at Id = 1.5 A, Vgs = 4.5 V.
1.1 V at Id = 250 µA.