| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
133,607 pcs
|
133607 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
129,885 pcs
|
129885 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
824 pcs
|
824 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
36 pcs
|
36 pcs | On Request | 1 | On Request | On Request | 19 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD23202W10 is a 12V P-Channel NexFET power MOSFET from Texas Instruments. It delivers a continuous drain current of 2.2A (silicon limited at 25°C) with a maximum Rds(on) of 53mΩ at 4.5V gate drive and 66mΩ at 2.5V. The device features ultra-low typical gate charge of 2.9nC and input capacitance of 512pF, enabling efficient high-frequency switching.
Designed for low-voltage power management, the MOSFET operates over a junction temperature range of -55°C to 150°C. It is housed in a compact 4-DSBGA (1mm x 1mm) surface-mount package with a 0.62mm profile, making it ideal for space-constrained applications. Gate ESD protection up to 3kV is included.
The device is RoHS compliant, halogen free, and lead free per the manufacturer. It is rated as a logic-level MOSFET, supporting gate drive voltages as low as 1.5V. Typical gate threshold voltage is -0.6V, with a maximum of 900mV at 250µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.67 | $0.67 |
| 10+ | $0.41 | $0.41 |
| 100+ | $0.27 | $0.27 |
| 500+ | $0.20 | $0.20 |
| 1,000+ | $0.18 | $0.18 |
| 3,000+ | $0.15 | $0.15 |
| 6,000+ | $0.14 | $0.14 |
| 9,000+ | $0.12 | $0.12 |
| 24,000+ | $0.12 | $0.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is -12V for this P-Channel MOSFET.
The device is available in a 4-DSBGA (1x1mm) package, also known as DSBGA (YZB).
-55°C to 150°C (junction temperature).
Yes, the manufacturer states RoHS compliant and halogen free (unverified).
2.2A at 25°C case temperature (silicon limited).
Typical -0.6V, maximum 900mV at 250µA drain current.
Maximum 53mΩ at 500mA, 4.5V gate drive.