| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
499,051 pcs
|
499051 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD22205L is a -8V P-Channel NexFET power MOSFET from Texas Instruments designed for low on-resistance and gate charge in an ultra-small package. It has a maximum drain current of 7.4A at TC=25°C and a maximum drain-to-source voltage of -8V. The on-resistance is 9.9mΩ maximum at Vgs=4.5V and 15mΩ maximum at Vgs=2.5V. The typical threshold voltage is -0.7V, and the device supports logic-level gate drive. Total gate charge is 6.5nC typical (8.5nC maximum) at Vgs=4.5V. Input capacitance is 1390pF maximum at Vds=4V. Maximum power dissipation is 600mW at 25°C ambient. The operating junction temperature range is -55°C to 150°C. The device is housed in a 4-XFLGA (PICOSTAR) package measuring 1.16mm x 1.16mm with a height of 0.36mm, suitable for surface mount assembly. It includes gate ESD protection and is lead-free and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.89 | $0.89 |
| 10+ | $0.56 | $0.56 |
| 100+ | $0.36 | $0.36 |
| 500+ | $0.28 | $0.28 |
| 1,000+ | $0.25 | $0.25 |
| 3,000+ | $0.21 | $0.21 |
| 6,000+ | $0.20 | $0.20 |
| 9,000+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is -8V.
It comes in a 4-XFLGA (PICOSTAR) surface mount package with dimensions 1.16mm x 1.16mm and height 0.36mm.
The operating junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 compliant, but this is unverified.
The maximum on-resistance is 9.9mΩ at Vgs=4.5V and Id=1A, and 15mΩ at Vgs=2.5V.
The maximum drain current is 7.4A at TC=25°C.
The total gate charge is 6.5nC typical and 8.5nC maximum at Vgs=4.5V.