CSD19538Q3AT The CSD19538Q3AT is a 100V N-Channel Power MOSFET from Texas Instruments. It features 61mΩ max Rds(on), 15A drain current, and a SON 3.3mm x 3.3mm package.
Mfr Part #:

CSD19538Q3AT

Available from 1 distributors
Mfr Name: Texas Instruments
Texas Instruments
The CSD19538Q3AT is a 100V N-Channel Power MOSFET from Texas Instruments. It features 61mΩ max Rds(on), 15A drain current, and a SON 3.3mm x 3.3mm package.
✓ Total Stock: 209 pcs
$ Price Range: $0.52 - $2.06

CSD19538Q3AT Available from 1 distributor

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✓ Non-Authorised
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CSD19538Q3AT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD19538Q3AT Description

Short technical summary and product information.

The CSD19538Q3AT is a 100V N-Channel power MOSFET from Texas Instruments, part of the NexFET family. It is designed for power conversion applications, offering a maximum drain-source voltage of 100V and a maximum on-resistance of 61mΩ at VGS=10V and ID=5A. The device supports a package-limited drain current of 15A and a silicon-limited current of 13.7A at TC=25°C.

 

This MOSFET features a low gate charge of 4.3nC typical, which reduces switching losses in high-frequency circuits. It has an input capacitance of 454pF and is avalanche rated for robust operation. The operating temperature range is -55°C to 150°C, suitable for demanding environments.

 

The device comes in an 8-VSONP surface-mount package measuring 3.3mm x 3.3mm, minimizing board space. It is lead-free, RoHS compliant, and halogen-free, meeting modern environmental standards. The low thermal resistance and ultra-low gate charge make it ideal for Power over Ethernet (PoE) applications.

CSD19538Q3AT Quick Information

Product Type: Power MOSFET
Series: NexFET
Canonical Name: 100V N-Channel NexFET Power MOSFET
Subcategory: N-Channel

CSD19538Q3AT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

CSD19538Q3AT Estimated Pricing

Qty Low High
1+ $2.06 $2.06
10+ $1.32 $1.32
100+ $0.77 $0.77
250+ $0.77 $0.77
500+ $0.67 $0.67
1,000+ $0.60 $0.60
2,500+ $0.58 $0.58
10,000+ $0.52 $0.52

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD19538Q3AT Features

  • 100V drain-source voltage rating.
  • 61mΩ max on-resistance at 10V.
  • 15A package-limited drain current.
  • Ultra-low gate charge of 4.3nC.
  • Surface mount SON 3.3mm package.

CSD19538Q3AT Applications

  • Ideal for Power over Ethernet (PoE) designs.
  • Suited for DC-DC converter circuits.
  • Used in load switching applications.

CSD19538Q3AT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (VDS) of the CSD19538Q3AT?

The maximum drain-source voltage is 100 V.

What is the maximum on-resistance (Rds(on)) of the CSD19538Q3AT?

The maximum on-resistance is 61 mΩ at VGS = 10 V and ID = 5 A.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction).

What package is the CSD19538Q3AT available in?

It comes in an 8-VSONP (3.3mm x 3.3mm) surface-mount package.

Is the CSD19538Q3AT RoHS compliant?

Yes, the manufacturer page indicates it is RoHS compliant, lead-free, and halogen-free.

What is the maximum drain current rating?

The package-limited drain current is 15 A, and the silicon-limited current is 13.7 A at TC = 25°C.

What is the gate charge of this MOSFET?

The total gate charge is 4.3 nC typical at VGS = 10 V.

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