| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,623 pcs
|
1623 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
543 pcs
|
543 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
190 pcs
|
190 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
75 pcs
|
75 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD19538Q3A is a 100V N-Channel enhancement-mode power MOSFET from Texas Instruments, part of the NexFET family. It is designed for high-efficiency power conversion with low gate charge and low on-resistance. Offering a drain-source voltage rating of 100V, gate-source voltage up to ±20V, and continuous drain current of 15A (package limited) or 13.7A (silicon limited at Tc=25°C), it suits a range of power management applications.
The device features maximum on-resistance of 61mΩ at VGS=10V, typical total gate charge of 4.3nC at 10V, and input capacitance of 454pF at VDS=50V. Threshold voltage is typically 3.2V (max 3.8V at Id=250µA). Power dissipation is rated at 2.8W at ambient temperature and 23W at case temperature. The MOSFET operates over a junction temperature range of -55°C to +150°C.
Housed in a compact 3.3mm × 3.3mm SON plastic package (8-PowerVDFN / 8-VSONP), it is surface-mount compatible and offers low thermal resistance. The device is lead-free, RoHS compliant, and halogen-free, supporting environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.03 | $1.03 |
| 10+ | $0.64 | $0.64 |
| 100+ | $0.42 | $0.42 |
| 500+ | $0.32 | $0.32 |
| 1,000+ | $0.29 | $0.29 |
| 2,500+ | $0.26 | $0.26 |
| 5,000+ | $0.23 | $0.23 |
| 10,000+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 100V, and gate-source voltage is rated up to ±20V.
It is available in a surface-mount 8-PowerVDFN package (8-VSONP, 3.3mm × 3.3mm).
It operates from -55°C to +150°C (junction temperature).
Yes, it is RoHS compliant, lead-free, and halogen-free according to the manufacturer.
The package-limited drain current is 15A; the silicon-limited current at Tc=25°C is 13.7A.
The maximum on-resistance (Rds(on)) is 61mΩ at VGS=10V per manufacturer specifications.
Total gate charge is typically 4.3nC at VGS=10V, with gate-drain 0.8nC and gate-source 1.6nC.