| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,096 pcs
|
1096 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD19538Q2 from Texas Instruments is a 100V, N-channel NexFET power MOSFET designed for high-efficiency power conversion. It features a maximum drain-source voltage of 100V and a gate-source voltage rating of ±20V. The device offers a typical on-resistance of 59mΩ at Vgs=10V and Id=5A, with a silicon-limited drain current of 13.1A at case temperature 25°C and a package-limited drain current of 14.4A at ambient temperature 25°C.
Key electrical characteristics include a typical gate threshold voltage of 3.2V, low input capacitance of 454pF at Vds=50V, and total gate charge of 4.3nC typical (5.6nC maximum). The MOSFET is avalanche rated and features ultra-low Qg and Qgd for reduced switching losses.
The device is housed in a surface-mount 6-WDFN exposed pad package (6-WSON 2x2mm), supporting an operating junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.5W at ambient and 20.2W at case temperature 25°C. It is lead-free, RoHS compliant, and halogen free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.82 | $0.82 |
| 10+ | $0.51 | $0.51 |
| 100+ | $0.33 | $0.33 |
| 500+ | $0.25 | $0.25 |
| 1,000+ | $0.22 | $0.22 |
| 3,000+ | $0.19 | $0.19 |
| 6,000+ | $0.18 | $0.18 |
| 9,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 100 V.
The maximum on-resistance (Rds(on)) is 59 mΩ at Vgs=10V and Id=5A.
The operating junction temperature range is -55°C to 150°C.
Yes, the datasheet indicates it is RoHS compliant and lead-free.
It comes in a surface-mount 6-WDFN exposed pad package (6-WSON 2x2mm).
The typical gate threshold voltage (Vgs(th)) is 3.2 V at Id=250µA.
The package-limited drain current is 14.4 A at Ta=25°C; the silicon-limited drain current is 13.1 A at Tc=25°C.