| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD19537Q3T is a 100V N-Channel NexFET power MOSFET from Texas Instruments designed for high-efficiency power conversion. It supports a continuous drain current of 50A (at Ta) and 53A silicon limited at TC=25°C, with a package limited current of 50A. The maximum drain-source on-resistance is 14.5mOhm at 10A and 10V gate drive.
Key electrical characteristics include a typical gate threshold voltage of 3V (maximum 3.6V at 250µA), total gate charge typical of 16nC (maximum 21nC at 10V), and input capacitance of 1680pF at 50V. The device is avalanche rated and offers low thermal resistance for improved thermal management.
The MOSFET is surface mounted in a VSON-CLIP (DQG) package, also designated as 8-VSON (3.3x3.3mm), with a footprint area of 10.89mm². It operates over a junction temperature range of -55°C to 150°C. The part is rated as Catalog and is not logic-level compatible (drive voltage 6V/10V).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.29 | $2.29 |
| 10+ | $1.47 | $1.47 |
| 100+ | $0.87 | $0.87 |
| 250+ | $0.87 | $0.87 |
| 500+ | $0.75 | $0.75 |
| 1,000+ | $0.68 | $0.68 |
| 2,500+ | $0.67 | $0.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The package is 8-PowerVDFN, also known as 8-VSON (3.3x3.3mm) or VSON-CLIP (DQG).
The operating junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 compliant, but this status is unverified.
The continuous drain current is 50A at Ta and 53A silicon limited at TC=25°C.
The typical total gate charge is 16nC, with a maximum of 21nC at 10V.
The maximum drain-source on-resistance is 14.5mOhm at 10A and 10V gate drive.