| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,048 pcs
|
7048 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,413 pcs
|
6413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,694 pcs
|
5694 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
196 pcs
|
196 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
128 pcs
|
128 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD19537Q3 is a 100V N-Channel NexFET power MOSFET from Texas Instruments, designed for high-efficiency power conversion. It features a low typical on-resistance of 12.1mΩ (maximum 14.5mΩ at VGS=10V) and ultra-low gate charge (Qg typ 16nC) to minimize switching and conduction losses.
The device is rated for a maximum drain-source voltage of 100V and gate-source voltage of ±20V. It supports continuous drain current up to 50A (package limited) and 53A (silicon limited at TC=25°C), with a pulsed drain current rating of 219A. Power dissipation is rated at 83W at TC=25°C and 2.8W at TA=25°C. The junction operating temperature range is -55°C to +150°C.
The CSD19537Q3 is housed in a compact SON 3.3mm x 3.3mm (8-PowerVDFN) surface-mount package, with tape and reel packaging for automated assembly. It is suitable for primary side isolated converters, motor control, and other power conversion circuits where low loss and small footprint are critical. The device is RoHS compliant and halogen free.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.03 | $2.03 |
| 10+ | $1.28 | $1.28 |
| 100+ | $0.84 | $0.84 |
| 500+ | $0.67 | $0.67 |
| 1,000+ | $0.59 | $0.59 |
| 2,500+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The CSD19537Q3 comes in an 8-PowerVDFN (also known as 8-VSON 3.3x3.3) surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant, halogen free, and has lead-free terminal plating.
The typical total gate charge (Qg) is 16 nC at VGS=10V, with Qgd=2.9 nC and Qgs=5.5 nC.
The maximum Rds(on) is 14.5 mΩ at VGS=10V and ID=10A.
The maximum drain-source voltage (VDS) is 100V.
The continuous drain current is 50A (package limited) and 53A (silicon limited at TC=25°C). At TA=25°C it is 9.7A.