| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,386 pcs
|
7386 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD19536KTT is a 100V N-Channel NexFET power MOSFET from Texas Instruments, designed to minimize losses in power conversion applications. It offers ultra-low gate charge (Qg typ 118nC) and gate-to-drain charge (Qgd typ 17nC), enabling high efficiency in switching circuits.
Key electrical specifications include a maximum drain-to-source on-resistance of 2.4mOhm at VGS=10V and ID=100A, with a typical value of 2mOhm. The device is avalanche rated with a single pulse avalanche energy of 806mJ. It supports a continuous drain current of 200A (package limited) and up to 272A (silicon limited at 25°C).
The MOSFET is housed in a surface-mount DDPAK/TO-263-3 package (D2PAK plastic package). It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 375W. The device is RoHS compliant, lead-free, and halogen free.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.27 | $5.27 |
| 10+ | $3.66 | $3.66 |
| 100+ | $2.63 | $2.63 |
| 500+ | $2.37 | $2.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100 V.
The package-limited continuous drain current is 200 A at TC=25°C. The silicon-limited continuous drain current is 272 A at TC=25°C and 192 A at TC=100°C.
The maximum on-resistance is 2.4 mOhm at VGS=10V and ID=100A. The typical on-resistance is 2 mOhm at VGS=10V and 2.2 mOhm at VGS=6V.
The operating junction temperature range is -55°C to 175°C.
Yes, the CSD19536KTT is RoHS3 compliant and lead-free as verified by the Texas Instruments datasheet.
The CSD19536KTT is available in a surface-mount DDPAK/TO-263-3 package (D2PAK plastic package).
The typical total gate charge (Qg) is 118 nC at VGS=10V. The typical gate-to-drain charge (Qgd) is 17 nC and the typical gate-to-source charge (Qgs) is 37 nC.