| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,526 pcs
|
5526 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
4,200 pcs
|
4200 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,810 pcs
|
2810 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD19536KCS is a 100V N-Channel NexFET power MOSFET from Texas Instruments, designed to minimize losses in power conversion applications. It features ultra-low gate charge (Qg typical 118 nC) and gate-to-drain charge (Qgd typical 17 nC), enabling high switching efficiency. The device is avalanche rated with a typical single-pulse avalanche energy of 806 mJ, ensuring ruggedness in demanding environments.
Key electrical specifications include a maximum drain-to-source voltage of 100V, continuous drain current of 150A (package limited) and up to 259A (silicon limited at 25°C), and a low on-resistance of 2.7 mΩ maximum at VGS=10V. The MOSFET operates over a junction temperature range of -55°C to 175°C and has a low thermal resistance of 0.4°C/W junction-to-case.
The CSD19536KCS is housed in a TO-220-3 through-hole package with Pb-Free terminal plating. It is RoHS3 compliant and halogen free. Typical applications include secondary side synchronous rectifiers and motor control circuits. The device is supplied in tubes with a standard quantity of 50 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.74 | $5.74 |
| 10+ | $3.00 | $3.00 |
| 100+ | $2.73 | $2.73 |
| 500+ | $2.33 | $2.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100 V.
The device is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant and halogen free.
The typical total gate charge at VGS=10V is 118 nC.
The maximum on-resistance is 2.7 mΩ at VGS=10V and ID=100A.
The typical single-pulse avalanche energy is 806 mJ at ID=127A, L=0.1mH, RG=25Ω.