| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,319 pcs
|
1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD19535KCS is a 100V N-Channel NexFET power MOSFET from Texas Instruments, designed to minimize conduction and switching losses in power conversion applications. This single MOSFET offers a maximum drain current of 150A (package limited) and a low typical on-resistance of 3.6 mOhm at 10V gate drive.
Key electrical characteristics include a maximum gate charge of 101 nC and a typical gate charge of 78 nC, with a gate-drain charge of 13 nC and gate-source charge of 25 nC. The device has a maximum input capacitance of 7930 pF at 50V drain-source voltage. It is avalanche rated and features ultra-low Qg and Qgd for efficient switching.
The CSD19535KCS is housed in a through-hole TO-220-3 package with dimensions of 10.16 mm by 4.55 mm and a package area of 46.228 mm². It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 300W at case temperature 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.45 | $4.45 |
| 10+ | $2.51 | $2.51 |
| 100+ | $2.17 | $2.17 |
| 500+ | $1.81 | $1.81 |
| 1,000+ | $1.63 | $1.63 |
| 2,500+ | $1.57 | $1.57 |
| 5,000+ | $1.55 | $1.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100 V.
The maximum drain current is 150 A (package limited) and 187 A (silicon limited at TC=25°C).
The maximum on-resistance is 3.6 mΩ at Vgs=10 V and Id=100 A.
The operating junction temperature range is -55°C to 175°C.
The CSD19535KCS is available in a through-hole TO-220-3 package.
The manufacturer states the device is RoHS compliant and has Pb-free terminal plating.
The typical gate charge (Qg) is 78 nC.