| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,846 pcs
|
4846 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD19534Q5AT is an N-Channel MOSFET manufactured by Texas Instruments. It is designed for high-efficiency power switching applications, offering a maximum drain-to-source voltage of 100V and a continuous drain current of 44A at 25°C case temperature. The device features a low maximum on-resistance of 15.1mΩ at a gate-source voltage of 10V and a drain current of 10A, enabling reduced conduction losses.
This MOSFET uses metal-oxide semiconductor technology and supports drive voltages of 6V and 10V for optimal Rds(on) performance. The gate threshold voltage is specified at a maximum of 3.4V at a drain current of 250µA. The device has a maximum gate charge of 22nC at Vgs=10V and an input capacitance of 1680pF at Vds=50V, which are important for switching performance and gate drive design.
The CSD19534Q5AT is housed in an 8-PowerTDFN package with a supplier device package of 8-VSONP (5x6), designed for surface-mount assembly. It operates over a junction temperature range of -55°C to 150°C, with maximum power dissipation of 3.2W at ambient temperature and 63W at case temperature. The gate-source voltage rating is ±20V.
This component is suitable for power management, DC-DC conversion, load switching, and other applications requiring high current handling and low on-resistance. Its surface-mount package and thermal characteristics make it appropriate for compact, high-density PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.53 | $2.53 |
| 10+ | $1.63 | $1.63 |
| 100+ | $0.97 | $0.97 |
| 250+ | $0.97 | $0.97 |
| 500+ | $0.84 | $0.84 |
| 1,000+ | $0.77 | $0.77 |
| 2,500+ | $0.74 | $0.74 |
| 5,000+ | $0.72 | $0.72 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100V.
The continuous drain current is 44A at Tc = 25°C.
The maximum on-resistance is 15.1mΩ at Id = 10A and Vgs = 10V.
The operating junction temperature range is -55°C to 150°C.
The package is 8-PowerTDFN with a supplier device package of 8-VSONP (5x6).
The maximum gate threshold voltage is 3.4V at Id = 250µA.
Maximum power dissipation is 3.2W at Ta = 25°C and 63W at Tc = 25°C.