| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
307,498 pcs
|
307498 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD19533Q5AT is an N-Channel MOSFET from Texas Instruments designed for high-efficiency power switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 100A at 25°C. The device offers a low maximum on-resistance of 9.4mOhm at a gate-source voltage of 10V and a drain current of 13A, enabling reduced conduction losses.
The MOSFET has a gate threshold voltage of 3.4V at 250µA and a maximum gate charge of 35nC at 10V, allowing for fast switching. Input capacitance is 2670pF at 50V drain-source voltage. The device is capable of dissipating up to 3.2W at ambient temperature and 96W at case temperature.
Packaged in an 8-PowerTDFN surface-mount package (supplier package 8-VSONP 5x6mm), the CSD19533Q5AT is suitable for compact power designs. It operates over a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $3.01 | $3.01 |
| 10+ | $1.96 | $1.96 |
| 100+ | $1.20 | $1.20 |
| 250+ | $1.20 | $1.20 |
| 500+ | $1.06 | $1.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 100V.
The continuous drain current is 100A at 25°C ambient temperature.
The maximum on-resistance is 9.4mOhm at Vgs=10V and Id=13A.
The maximum gate threshold voltage is 3.4V at Id=250µA.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-PowerTDFN surface-mount package (supplier package 8-VSONP 5x6mm).
The device is listed as RoHS3 Compliant, but this status is unverified.