Mfr Part #:

CSD19532Q5BT

N-Channel MOSFET with 100V drain-source voltage and 100A continuous drain current. Features low on-resistance of 4.9mOhm at 10V gate drive.

✓ Total Stock: 8,214 pcs

$ Price Range: $1.52 - $4.15

CSD19532Q5BT Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	8,214 pcs On Request	8214 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

CSD19532Q5BT Description

Short technical summary and product information.

The CSD19532Q5BT is an N-Channel MOSFET from Texas Instruments designed for high-efficiency power conversion. It features a drain-source voltage rating of 100V and a continuous drain current of 100A at ambient temperature. The device achieves a maximum on-resistance of 4.9mOhm at 17A and 10V gate drive, enabling low conduction losses.

With a gate charge of 62nC at 10V and input capacitance of 4810pF at 50V, this MOSFET is suitable for high-frequency switching applications. The maximum power dissipation is 195W at case temperature, and the operating junction temperature range is -55°C to 150°C.

The device is housed in a surface-mount 8-PowerTDFN package (8-VSON-CLIP, 5x6mm) with an exposed pad for thermal management. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). Typical applications include DC-DC converters, motor control, synchronous rectification, and load switching.

CSD19532Q5BT Quick Information

Product Type: MOSFET

Series: NexFET

Canonical Name: CSD19532Q5BT N-Channel MOSFET

Subcategory: N-Channel MOSFET

CSD19532Q5BT Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

CSD19532Q5BT Estimated Pricing

Qty	Low	High
1+	$4.15	$4.15
10+	$2.71	$2.71
100+	$1.73	$1.73
250+	$1.73	$1.73
500+	$1.52	$1.52

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD19532Q5BT Features

N-Channel MOSFET rated for 100V drain-source voltage.
Continuous drain current of 100A at 25°C.
Low on-resistance of 4.9mOhm at 10V gate drive.
Gate charge of 62nC for efficient switching.
Surface mount 8-VSON-CLIP package with exposed pad.

CSD19532Q5BT Applications

Used in high-efficiency DC-DC converters.
Ideal for motor control and power management.
Suitable for synchronous rectification circuits.
Applied in battery protection and load switches.

CSD19532Q5BT FAQs

7 frequently asked questions generated from this part’s specifications.

What is the operating temperature range?

-55°C to 150°C (junction).

Is this device RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the package type?

8-PowerTDFN (8-VSON-CLIP 5x6).

What is the drain-source voltage rating?

100V.

What is the maximum drain current?

100A at ambient temperature.

What is the typical on-resistance?

Maximum 4.9mOhm at 17A, 10V.

What is the gate threshold voltage?

Maximum 3.2V at 250µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Texas Instruments
Current	100 A (Ta)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 10 V
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	4810 pF @ 50 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	3.1 W (Ta)
Rds On (Max) @ Id, Vgs	4.9 mOhm @ 17 A, 10 V
Supplier Device Package	8-VSON-CLIP (5x6)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	3.2 V @ 250 µA