CSD19532KTTT CSD19532KTTT is an N-Channel MOSFET from Texas Instruments with a maximum drain-source voltage of 100V and continuous drain current of 200A.
Mfr Part #:

CSD19532KTTT

Available from 2 distributors
Mfr Name: Texas Instruments
Texas Instruments
CSD19532KTTT is an N-Channel MOSFET from Texas Instruments with a maximum drain-source voltage of 100V and continuous drain current of 200A.
✓ Total Stock: 53,615 pcs
$ Price Range: $1.56 - $4.20

CSD19532KTTT Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
53,583 pcs
53583 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
32 pcs
32 pcs On Request 1 On Request On Request On Request On Request On Request

CSD19532KTTT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD19532KTTT Description

Short technical summary and product information.

The CSD19532KTTT is an N-Channel power MOSFET from Texas Instruments designed for high-current switching applications. It features a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current rating of 200A at ambient temperature.

 

Key electrical characteristics include a maximum on-state resistance (Rds(on)) of 5.6 mOhm at a gate voltage of 10V and drain current of 90A. The device has a maximum gate charge (Qg) of 57 nC at Vgs=10V and an input capacitance (Ciss) of 5060 pF at Vds=50V. The gate threshold voltage (Vgs(th)) is 3.2V maximum at Id=250 µA.

 

The CSD19532KTTT is offered in a surface-mount DDPAK/TO-263-3 package (TO-263-4, D²Pak). It can dissipate up to 250W and operates over a junction temperature range of -55°C to 175°C.

CSD19532KTTT Quick Information

Product Type: MOSFET
Canonical Name: CSD19532KTTT N-Channel MOSFET
Subcategory: Power MOSFET

CSD19532KTTT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

CSD19532KTTT Estimated Pricing

Qty Low High
1+ $4.20 $4.20
10+ $2.17 $2.17
50+ $2.17 $2.17
100+ $1.67 $1.67
500+ $1.60 $1.60
2,500+ $1.56 $1.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD19532KTTT Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 200A.
  • Low on-resistance of 5.6 mOhm at 10V gate drive.
  • Surface-mount DDPAK/TO-263-3 package.
  • Operates from -55°C to 175°C junction temperature.

CSD19532KTTT Applications

  • Suitable for high-current power switching circuits.
  • Used in DC-DC converters and power supplies.
  • Ideal for motor control and load switching.
  • Applicable in battery management systems.

CSD19532KTTT FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the CSD19532KTTT?

The maximum drain-to-source voltage (Vdss) is 100V.

What is the continuous drain current rating of the CSD19532KTTT?

The maximum continuous drain current is 200A at ambient temperature.

What is the on-resistance of the CSD19532KTTT?

The maximum on-resistance (Rds(on)) is 5.6 mOhm at a gate voltage of 10V and drain current of 90A.

What is the operating temperature range of the CSD19532KTTT?

The operating junction temperature range is -55°C to 175°C.

What package does the CSD19532KTTT come in?

The CSD19532KTTT is available in a surface-mount DDPAK/TO-263-3 package (TO-263-4, D²Pak).

Is the CSD19532KTTT RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

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