CSD19531Q5A CSD19531Q5A is a 100V N-Channel NexFET power MOSFET from Texas Instruments. It features 100A continuous drain current and 6.4mΩ maximum on-resistance at 10V.
Mfr Part #:

CSD19531Q5A

Available from 5 distributors
Mfr Name: Texas Instruments
Texas Instruments
CSD19531Q5A is a 100V N-Channel NexFET power MOSFET from Texas Instruments. It features 100A continuous drain current and 6.4mΩ maximum on-resistance at 10V.
✓ Total Stock: 13,623 pcs
$ Price Range: $0.75 - $2.49

CSD19531Q5A Available from 5 distributors

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✓ Non-Authorised

CSD19531Q5A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD19531Q5A Description

Short technical summary and product information.

The CSD19531Q5A is a 100V N-Channel NexFET power MOSFET manufactured by Texas Instruments. It is designed for power conversion applications requiring high efficiency and low conduction losses. The device offers a maximum drain-to-source voltage of 100V and a continuous drain current of 100A (package limited) or 110A (silicon limited) at a case temperature of 25°C. The typical on-resistance is 5.3mΩ at Vgs=10V, with a maximum of 6.4mΩ at 16A and 10V.

 

This MOSFET features ultra-low gate charge (typical 37nC total) and low gate-to-drain charge (6.6nC), enabling fast switching and reduced switching losses. It is avalanche rated with a single-pulse avalanche energy of 180mJ. The device is logic level non-compliant, requiring gate drive voltages of 6V or 10V for optimal performance.

 

The CSD19531Q5A is housed in a SON 5mm x 6mm plastic package (8-PowerTDFN / 8-VSONP) with a junction-to-case thermal resistance of 1.0°C/W maximum. It is designed for surface mount assembly and is available in tape and reel packaging with 2500 units per reel. The operating junction temperature range is -55°C to 150°C.

 

Typical applications include primary side telecom, secondary side synchronous rectification, and motor control. The device is RoHS3 compliant, halogen free, and has Pb-free terminal plating.

CSD19531Q5A Quick Information

Product Type: N-Channel Power MOSFET
Series: NexFET
Canonical Name: CSD19531Q5A 100V N-Channel NexFET Power MOSFET
Subcategory: N-Channel Power MOSFET

CSD19531Q5A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free Terminal Plating

CSD19531Q5A Estimated Pricing

Qty Low High
1+ $2.49 $2.49
10+ $1.60 $1.60
100+ $1.09 $1.09
500+ $0.87 $0.87
1,000+ $0.80 $0.80
2,500+ $0.75 $0.75

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD19531Q5A Features

  • 100V drain-to-source voltage rating.
  • 100A continuous drain current capability.
  • Ultra-low gate charge for fast switching.
  • Low on-resistance of 6.4mΩ maximum.
  • Avalanche rated for rugged operation.

CSD19531Q5A Applications

  • Primary side telecom power supplies.
  • Secondary side synchronous rectification.
  • Motor control and drive circuits.
  • High-efficiency DC-DC converters.

CSD19531Q5A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the CSD19531Q5A?

100V.

What package does the CSD19531Q5A come in?

SON 5mm x 6mm plastic package (8-PowerTDFN / 8-VSONP).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the CSD19531Q5A RoHS compliant?

Yes, RoHS3 compliant and halogen free.

What is the typical on-resistance at 10V?

5.3mΩ typical, 6.4mΩ maximum.

What is the gate charge total?

37nC typical, 48nC maximum at 10V.

What is the continuous drain current at 25°C?

100A package limited, 110A silicon limited at case temperature 25°C.

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