| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,080 pcs
|
26080 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD19506KTT is an 80V N-Channel NexFET power MOSFET from Texas Instruments, designed to minimize losses in power conversion applications. It features ultra-low gate charge (Qg typ 120nC) and low thermal resistance (RθJC max 0.4°C/W), enabling high efficiency in compact designs.
The device supports a continuous drain current of 200A (package limited) at TC=25°C, with silicon limited capability up to 291A. The on-resistance is 2.0mΩ typical at VGS=10V and 2.3mΩ maximum. Avalanche rated with single-pulse energy of 832mJ, it is suitable for rugged applications.
Packaged in a surface-mount TO-263-4 (D2PAK) with three leads and tab, the CSD19506KTT is Pb-free terminal plated, RoHS compliant, and halogen free. It operates over a junction temperature range of -55°C to 175°C with a maximum power dissipation of 375W at TC=25°C.
Typical applications include secondary side synchronous rectifiers and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.98 | $5.98 |
| 10+ | $3.99 | $3.99 |
| 100+ | $2.87 | $2.87 |
| 500+ | $2.37 | $2.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
TO-263-4, D²Pak (3 leads + tab), surface mount.
-55°C to 175°C junction temperature.
Yes, RoHS3 compliant per datasheet.
200A (package limited) at TC=25°C; silicon limited 291A.
2.0mΩ typical at VGS=10V, 2.3mΩ maximum.
120nC typical at VGS=10V, maximum 156nC.