| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,960 pcs
|
3960 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation |
The CSD19505KCS from Infineon is an 80V N-Channel NexFET™ Power MOSFET engineered to minimize losses in power conversion applications. This device boasts a low drain-to-source on-resistance of 2.6 mΩ at a gate-to-source voltage of 10V, and a typical gate charge of 76 nC.
Key electrical characteristics include a drain-to-source voltage of 80V and a gate-to-source voltage range of ±20V. The MOSFET is rated for a continuous drain current of up to 208A (silicon limited at 25°C) and a pulsed drain current of 400A. It also features avalanche rating and low thermal resistance.
Packaged in a standard TO-220 plastic package, the CSD19505KCS is suitable for through-hole mounting. The operating junction and storage temperature range is from –55°C to 175°C. This MOSFET is RoHS compliant and halogen-free, with Pb-free terminal plating.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 80V.
The typical on-resistance is 2.6 mΩ.
The total gate charge is 76 nC at 10V.
The CSD19505KCS is available in a TO-220 plastic package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.