| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
132,924 pcs
|
132924 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,319 pcs
|
1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD19505KCS is an 80V N-Channel NexFET power MOSFET manufactured by Texas Instruments. It is designed for high-efficiency power conversion applications, featuring a low on-resistance of 3.1 mΩ at Vgs=10V and a maximum drain current of 150A (package limited) or 208A (silicon limited at Tc=25°C).
Key electrical characteristics include a gate threshold voltage of 2.6V typical, total gate charge of 76 nC, and input capacitance of 7820 pF. The device is avalanche rated and operates over a junction temperature range of -55°C to 175°C. It is compatible with 6V and 10V drive voltages.
The MOSFET is housed in a through-hole TO-220-3 package with Pb-free terminal plating. It is RoHS3 compliant, halogen free, and has an MSL rating of 1 (unlimited, low confidence). The package dimensions are 10.16 mm × 4.55 mm.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.37 | $4.37 |
| 10+ | $2.26 | $2.26 |
| 100+ | $2.04 | $2.04 |
| 500+ | $1.67 | $1.67 |
| 1,000+ | $1.55 | $1.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
TO-220-3 through-hole package.
-55°C to 175°C (junction).
Yes, RoHS3 compliant.
150A (package limited at 25°C) and 208A (silicon limited at Tc=25°C).
3.1 mΩ (max).
76 nC at Vgs=10V.