| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,297 pcs
|
31297 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD19502Q5BT is an N-Channel power MOSFET from Texas Instruments, designed for high-current switching applications. It features a drain-to-source voltage rating of 80V and a continuous drain current rating of 100A at ambient temperature. The device uses MOSFET (Metal Oxide) technology and is housed in an 8-PowerTDFN surface-mount package.
The device offers a maximum on-resistance of 4.1mΩ at a drain current of 19A and gate-source voltage of 10V, with a drive voltage range of 6V to 10V. The maximum gate threshold voltage is 3.3V at 250µA drain current, and the gate-source voltage rating is ±20V. Total gate charge is 62nC at 10V, and input capacitance is 4870pF at 40V drain-source voltage.
Power dissipation is rated at 3.1W at ambient temperature and 195W at case temperature. The device operates over a junction temperature range of -55°C to 150°C. The 8-VSON-CLIP (5x6) supplier device package provides a compact surface-mount solution for space-constrained designs.
This MOSFET is suitable for power management, load switching, and DC-DC conversion circuits where high efficiency and low conduction losses are required. The surface-mount package enables automated assembly in high-volume manufacturing.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.08 | $4.08 |
| 10+ | $2.68 | $2.68 |
| 100+ | $1.67 | $1.67 |
| 250+ | $1.67 | $1.67 |
| 500+ | $1.47 | $1.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 80V.
The maximum drain current is 100A at ambient temperature (Ta).
The maximum on-resistance is 4.1mΩ at a drain current of 19A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The device is available in an 8-PowerTDFN package with a supplier device package of 8-VSON-CLIP (5x6).
The maximum gate-source voltage is ±20V.
Maximum power dissipation is 3.1W at ambient temperature and 195W at case temperature.