| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,395 pcs
|
2395 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,565 pcs
|
1565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
34 pcs
|
34 pcs | On Request | 1 | On Request | On Request | 25+ | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD18543Q3A is a 60V N-Channel NexFET power MOSFET from Texas Instruments, designed to minimize losses in power conversion applications. It features a maximum drain-to-source voltage of 60V and a silicon-limited continuous drain current of 60A at 25°C case temperature, with a package-limited current of 35A. The device offers low on-resistance of 9.9mΩ maximum at VGS=10V and 15.6mΩ at VGS=4.5V, with a typical on-resistance of 8.1mΩ.
This logic-level MOSFET can be driven at 4.5V or 10V gate voltages, with a typical gate threshold voltage of 2V and a maximum of 2.7V. It features low gate charge (typical 11.1nC at VGS=10V) and low gate-drain charge (1.7nC), which helps reduce switching losses. The device is avalanche rated and has a maximum power dissipation of 66W at 25°C case temperature.
The CSD18543Q3A is housed in a compact 3.3mm x 3.3mm 8-PowerVDFN surface-mount package (8-VSONP). It operates over a junction temperature range of -55°C to 150°C. The device is lead-free, RoHS compliant, and halogen-free, making it suitable for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.29 | $1.29 |
| 10+ | $0.81 | $0.81 |
| 100+ | $0.54 | $0.54 |
| 500+ | $0.42 | $0.42 |
| 1,000+ | $0.38 | $0.38 |
| 2,500+ | $0.34 | $0.34 |
| 5,000+ | $0.30 | $0.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDS) is 60V.
The silicon-limited continuous drain current is 60A at TC=25°C, and the package-limited current is 35A.
The maximum on-resistance is 9.9mΩ at VGS=10V and 15.6mΩ at VGS=4.5V. The typical on-resistance is 8.1mΩ.
The junction operating temperature range is -55°C to 150°C.
Yes, the manufacturer page states the device is RoHS compliant.
It is available in an 8-PowerVDFN surface-mount package, specifically the 8-VSONP (3x3.15) supplier package, measuring 3.3mm x 3.3mm.