| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
259 pcs
|
259 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD18542KTT is a 60V N-Channel NexFET power MOSFET manufactured by Texas Instruments. It features a maximum drain current of 200A (package-limited) and 170A (silicon-limited at TC=25°C), with a low on-resistance of 4mΩ at VGS=10V and 5.1mΩ at VGS=4.5V. This device is logic-level gate driven and avalanche rated, making it suitable for high-efficiency power conversion applications.
The MOSFET offers typical gate charge of 44nC and input capacitance of 5070pF, ensuring fast switching performance. It operates over a junction temperature range of -55°C to 175°C and can dissipate up to 250W.
Housed in a D2PAK (TO-263) surface-mount package, the CSD18542KTT is RoHS compliant and halogen free. The package has a footprint of 10.16mm × 15.1mm.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.25 | $3.25 |
| 10+ | $2.11 | $2.11 |
| 100+ | $1.46 | $1.46 |
| 500+ | $1.17 | $1.17 |
| 1,000+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA (DDPAK/TO-263-3).
-55°C to 175°C (junction temperature).
Yes, it is RoHS compliant and halogen free.
4 mΩ at VGS=10 V and 5.1 mΩ at VGS=4.5 V.
Typical gate charge is 44 nC at VGS=10 V.
200 A (package-limited) and 170 A (silicon-limited at TC=25°C).