CSD18537NQ5AT CSD18537NQ5AT is an N-Channel MOSFET from Texas Instruments. It features a 60V drain-source voltage, 50A continuous drain current, and low 13mOhm on-resistance.
Mfr Part #:

CSD18537NQ5AT

Available from 2 distributors
Mfr Name: Texas Instruments
Texas Instruments
CSD18537NQ5AT is an N-Channel MOSFET from Texas Instruments. It features a 60V drain-source voltage, 50A continuous drain current, and low 13mOhm on-resistance.
✓ Total Stock: 37,490 pcs
$ Price Range: $0.66 - $2.39

CSD18537NQ5AT Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
36,740 pcs
36740 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
750 pcs
750 pcs On Request 1 On Request On Request 21+ On Request On Request

CSD18537NQ5AT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD18537NQ5AT Description

Short technical summary and product information.

The CSD18537NQ5AT is an N-Channel MOSFET designed and manufactured by Texas Instruments. It operates with a maximum drain-to-source voltage of 60V and can handle a continuous drain current of 50A (at Tc). The device features a low on-resistance of 13mOhm typical at 12A and 10V gate drive, making it suitable for high-efficiency power switching applications.

 

The MOSFET utilizes MOSFET (Metal Oxide) technology and is specified for drive voltages between 6V and 10V. Its gate threshold voltage is a maximum of 3.5V at 250µA drain current. The input capacitance is 1480pF at 30V Vds, and the gate charge is 18nC at 10V, indicating moderate switching speed.

 

The device is surface-mount packaged in the 8-PowerTDFN package, with a supplier device package of 8-VSONP (5x6). Maximum power dissipation is 3.2W at ambient temperature and 75W at case temperature, with an operating junction temperature range of -55°C to 150°C. These characteristics make it appropriate for a variety of power management and DC-DC conversion circuits.

CSD18537NQ5AT Quick Information

Product Type: N-Channel MOSFET
Series: NexFET
Canonical Name: CSD18537NQ5AT N-Channel MOSFET, 60V, 50A, 8-VSONP (5x6)
Subcategory: N-Channel MOSFET

CSD18537NQ5AT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

CSD18537NQ5AT Estimated Pricing

Qty Low High
1+ $2.39 $2.39
10+ $1.53 $1.53
100+ $0.91 $0.91
250+ $0.91 $0.91
500+ $0.84 $0.84
1,000+ $0.76 $0.76
2,500+ $0.73 $0.73
5,000+ $0.69 $0.69
10,000+ $0.66 $0.66

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD18537NQ5AT Features

  • N-Channel MOSFET, 60V drain-source voltage.
  • 50A continuous drain current rating.
  • Low 13mOhm on-resistance at 10V.
  • Surface mount 8-VSONP package.
  • Wide operating temperature range -55°C to 150°C.

CSD18537NQ5AT Applications

  • Power management in DC-DC converters.
  • Load switching in low-voltage systems.
  • Battery protection circuits.
  • Motor drive applications.

CSD18537NQ5AT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the CSD18537NQ5AT?

60V.

What is the package type of this MOSFET?

8-PowerTDFN, with supplier device package 8-VSONP (5x6).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the CSD18537NQ5AT RoHS compliant?

RoHS3 compliant (unverified).

What is the maximum drain current?

50A at Tc (case temperature).

What is the typical on-resistance (Rds(on))?

13mOhm maximum at 12A drain current and 10V gate-source voltage.

What is the gate charge of this MOSFET?

18nC at 10V gate-source voltage.

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