| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,450 pcs
|
7450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD18536KTT is a 60V N-Channel NexFET power MOSFET designed for high-efficiency power conversion. It features a maximum drain-source voltage of 60V and a continuous drain current of 200A (package limited) or 349A (silicon limited at Tc=25°C). The device achieves a low on-resistance of 1.6mOhm at Vgs=10V and 2.2mOhm at Vgs=4.5V, minimizing conduction losses.
This MOSFET is logic-level compatible with a typical gate threshold voltage of 1.8V. It offers low gate charge (108nC typical) and low gate-drain charge (14nC typical), enabling fast switching. The device is avalanche rated and has low thermal resistance for reliable operation.
The CSD18536KTT is housed in a surface-mount DDPAK/TO-263-3 package (TO-263-4, D²Pak). It operates over a junction temperature range of -55°C to 175°C. The part is RoHS compliant and halogen free, with Pb-free terminal plating.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.33 | $5.33 |
| 10+ | $3.55 | $3.55 |
| 100+ | $2.54 | $2.54 |
| 500+ | $2.28 | $2.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 60V.
The continuous drain current is 200A (package limited) and 349A (silicon limited at Tc=25°C).
The maximum on-resistance is 1.6mOhm at Vgs=10V and 2.2mOhm at Vgs=4.5V.
It is available in a surface-mount DDPAK/TO-263-3 package (TO-263-4, D²Pak).
The junction operating temperature range is -55°C to 175°C.
Yes, it is listed as RoHS3 compliant and halogen free, with Pb-free terminal plating.
The typical gate charge (Qg) is 108nC, with gate-drain charge (Qgd) of 14nC and gate-source charge (Qgs) of 18nC.