CSD18535KTT CSD18535KTT is a 60V N-Channel NexFET power MOSFET from Texas Instruments. It features 2 mΩ maximum on-resistance at 10V and 200A package-limited drain current.
Mfr Part #:

CSD18535KTT

Available from 2 distributors
Mfr Name: Texas Instruments
Texas Instruments
CSD18535KTT is a 60V N-Channel NexFET power MOSFET from Texas Instruments. It features 2 mΩ maximum on-resistance at 10V and 200A package-limited drain current.
✓ Total Stock: 36,950 pcs
$ Price Range: $1.53 - $4.15

CSD18535KTT Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
29,500 pcs
29500 pcs On Request 1 On Request On Request 2208+ On Request On Request
Non-Authorised Inventory information
7,450 pcs
7450 pcs On Request 1 On Request On Request On Request On Request On Request

CSD18535KTT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

CSD18535KTT Description

Short technical summary and product information.

The CSD18535KTT is a 60V N-Channel NexFET power MOSFET from Texas Instruments in a single configuration. It offers ultralow on-resistance of 2 mΩ maximum at VGS=10V and 2.9 mΩ at VGS=4.5V, enabling high efficiency in power conversion applications. The device is logic level compatible, allowing direct drive from 4.5V gate signals.

 

Key electrical characteristics include a typical threshold voltage of 1.9V, total gate charge of 63 nC typical at 10V, and low gate-drain charge of 10.4 nC for fast switching. Input capacitance is 6620 pF maximum at VDS=30V. The MOSFET is avalanche rated and features low thermal resistance.

 

The drain current is rated at 200A package limited and 279A silicon limited at TC=25°C, with maximum power dissipation of 300W. Operating junction temperature range is -55°C to 175°C.

 

The device is housed in a TO-263-4 (D2PAK) surface mount package with body dimensions 10.16 mm × 15.1 mm. It is RoHS3 compliant, halogen free, and has Pb-free terminal plating.

CSD18535KTT Quick Information

Product Type: Power MOSFET
Series: NexFET
Canonical Name: CSD18535KTT 60V N-Channel NexFET Power MOSFET
Subcategory: N-Channel Power MOSFET

CSD18535KTT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

CSD18535KTT Estimated Pricing

Qty Low High
1+ $4.15 $4.15
10+ $2.70 $2.70
100+ $2.12 $2.12
500+ $1.77 $1.77
1,000+ $1.64 $1.64
2,500+ $1.53 $1.53

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD18535KTT Features

  • 60V drain-source voltage rating.
  • 2 mΩ maximum on-resistance at 10V gate drive.
  • 200A package-limited drain current.
  • Logic level gate drive compatible.
  • RoHS and halogen free compliant.

CSD18535KTT Applications

  • Used in high-efficiency DC-DC converters.
  • Suitable for synchronous rectification circuits.
  • Ideal for motor drive applications.
  • Designed for power management systems.

CSD18535KTT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

60 V

What is the maximum on-resistance?

2 mΩ at VGS=10V, 2.9 mΩ at VGS=4.5V

What is the typical gate charge?

63 nC at VGS=10V

What is the operating temperature range?

-55°C to 175°C

What package is available?

TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Is it RoHS compliant?

Yes, RoHS3 compliant

What is the maximum drain current?

200 A package limited, 279 A silicon limited at TC=25°C

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