| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
35,000 pcs
|
35000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
3,980 pcs
|
3980 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
3,250 pcs
|
3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
227 pcs
|
227 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
40 pcs
|
40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD18534Q5A is a 60-volt N-channel NexFET power MOSFET from Texas Instruments designed to minimize conduction and switching losses in power conversion applications. This single MOSFET features ultra-low gate charge (Qg typ 17nC) and gate-drain charge (Qgd typ 3.5nC) for efficient high-frequency operation. Its logic-level gate threshold voltage (1.9V typical) allows direct drive from low-voltage controllers.
Rated for maximum continuous drain current of 50A (package-limited) at 25°C case temperature, the device also supports 69A silicon-limited current. The on-resistance is specified at 9.8mΩ maximum with VGS=10V and 12.4mΩ with VGS=4.5V. The MOSFET operates over a junction temperature range of -55°C to 150°C and can dissipate up to 77W at 25°C case temperature.
The CSD18534Q5A comes in a VSONP (DQJ) surface-mount package measuring 4.9mm × 6mm, suitable for compact power stage designs. It is RoHS compliant, halogen free, and has lead-free terminal plating. The device is avalanche rated and offers low thermal resistance for reliable thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.74 | $1.74 |
| 10+ | $1.11 | $1.11 |
| 100+ | $0.74 | $0.74 |
| 500+ | $0.58 | $0.58 |
| 1,000+ | $0.53 | $0.53 |
| 2,500+ | $0.48 | $0.48 |
| 5,000+ | $0.43 | $0.43 |
| 25,000+ | $0.41 | $0.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 60 V.
The maximum on-resistance is 9.8 mΩ at VGS=10V.
The package-limited maximum continuous drain current is 50 A at TC=25°C, and the silicon-limited current is 69 A.
The operating junction temperature range is -55°C to 150°C.
It comes in a VSONP (DQJ) surface-mount package measuring 4.9mm x 6mm (8-VSONP).
Yes, the manufacturer page confirms it is RoHS compliant and halogen free.
The typical total gate charge (Qg) is 17 nC at VGS=10V.