| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,481 pcs
|
33481 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD18532Q5BT is an N-Channel MOSFET from Texas Instruments, designed for high-efficiency power switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 100A (at Ta). The device has a low on-resistance of 3.2mOhm (max) at 25A drain current and 10V gate drive, enabling low conduction losses. The MOSFET uses standard MOSFET technology. The gate charge is 58 nC at 10V, and input capacitance is 5070 pF at 30V. The threshold voltage is 2.2V max. The device is surface mounted in an 8-PowerTDFN package (8-VSONP 5x6). It supports a wide operating temperature range from -55°C to 150°C. Power dissipation is 3.2W at ambient and 156W at case temperature. The device is listed as RoHS3 compliant, REACH unaffected, and has MSL 1 rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.98 | $3.98 |
| 10+ | $2.60 | $2.60 |
| 100+ | $1.64 | $1.64 |
| 250+ | $1.64 | $1.64 |
| 500+ | $1.44 | $1.44 |
| 1,000+ | $1.43 | $1.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
100A at Ta.
3.2mOhm maximum at 25A drain current and 10V gate drive.
58 nC at 10V gate voltage.
-55°C to 150°C junction temperature.
Surface mount 8-PowerTDFN, also known as 8-VSONP (5x6).
Listed as RoHS3 compliant, but not verified.