CSD18510KTT CSD18510KTT is a 40V N-Channel NexFET power MOSFET from Texas Instruments, rated for 274A continuous drain current and 1.7 mΩ maximum on-resistance at 10V drive.
Mfr Part #:

CSD18510KTT

Available from 2 distributors
Mfr Name: Texas Instruments
Texas Instruments
CSD18510KTT is a 40V N-Channel NexFET power MOSFET from Texas Instruments, rated for 274A continuous drain current and 1.7 mΩ maximum on-resistance at 10V drive.
✓ Total Stock: 57,777 pcs
$ Price Range: $1.01 - $3.19

CSD18510KTT Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
57,329 pcs
57329 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
448 pcs
448 pcs On Request 1 On Request On Request 18+ On Request On Request

CSD18510KTT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD18510KTT Description

Short technical summary and product information.

The CSD18510KTT is a 40V N-Channel NexFET power MOSFET from Texas Instruments, designed for high-efficiency power conversion. It features a maximum drain-source voltage of 40V and a continuous drain current of 274A (silicon limited at Tc=25°C) or 200A (package limited). On-resistance is a maximum of 1.7 mΩ at Vgs=10V and 100A, and 2.6 mΩ at Vgs=4.5V. The device is logic-level compatible, enabling operation with low gate drive voltages.

 

Typical gate charge is 119 nC at 10V, with a gate-drain charge of 21 nC and gate-source charge of 28 nC. Input capacitance is 11400 pF at Vds=20V. The MOSFET is avalanche rated and features ultra-low Qg and Qgd for reduced switching losses. It is offered in a D2PAK (TO-263-3) surface-mount package with dimensions 10.16 mm × 15.1 mm.

 

The operating junction temperature range is -55°C to 175°C. The device is RoHS compliant and halogen free, with lead-free terminal plating. It is suitable for high-current applications such as DC-DC converters, motor drives, and synchronous rectification.

CSD18510KTT Quick Information

Product Type: Power MOSFET
Canonical Name: CSD18510KTT 40V N-Channel NexFET Power MOSFET
Subcategory: Single N-Channel MOSFET

CSD18510KTT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

CSD18510KTT Estimated Pricing

Qty Low High
1+ $3.19 $3.19
10+ $2.07 $2.07
100+ $1.43 $1.43
500+ $1.10 $1.10
1,000+ $1.01 $1.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD18510KTT Features

  • Ultra-low Qg and Qgd gate charge.
  • Low on-resistance at 10V and 4.5V drive.
  • Avalanche rated for ruggedness.
  • RoHS compliant and halogen free.
  • D2PAK surface mount package.

CSD18510KTT Applications

  • Power conversion and DC-DC converters.
  • Motor drive and power management.
  • High-current switching applications.
  • Synchronous rectification circuits.
  • Battery protection and load switches.

CSD18510KTT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the CSD18510KTT?

40 V.

What package is the CSD18510KTT available in?

TO-263-3 (D2PAK) surface mount.

What is the operating temperature range?

-55°C to 175°C (junction).

Is the CSD18510KTT RoHS compliant?

Yes, RoHS3 Compliant (unverified).

What is the maximum drain current rating?

274A at Tc=25°C (silicon limited) and 200A (package limited).

What is the on-resistance at 10V gate drive?

Maximum 1.7 mΩ at 100A.

What is the typical gate charge?

119 nC typical at 10V.

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