CSD18501Q5A

The CSD18501Q5A is a 40 V N-channel NexFET power MOSFET from Texas Instruments in a SON 5 mm x 6 mm plastic package. It is designed for power conversion applications and supports logic-level gate drive. The device has a maximum drain-to-source voltage of 40 V and a gate-to-source voltage rating of ±20 V.

For on-resistance, the typical value is 2.5 mΩ at VGS=10 V and 3.3 mΩ at VGS=4.5 V, with maximum ratings of 3.2 mΩ and 4.3 mΩ respectively. Continuous drain current is rated at 100 A package-limited at TC=25°C, 161 A silicon-limited at TC=25°C, and 22 A at TA=25°C. Pulsed drain current is 400 A. Total gate charge is 42 nC typical at VGS=10 V and 20 nC at 4.5 V. The device is avalanche rated with a single-pulse avalanche energy of 231 mJ.

The MOSFET operates over a junction temperature range of -55°C to 150°C and has low thermal resistance. It is intended for applications such as DC-DC conversion, secondary-side synchronous rectification, and battery motor control. The component is RoHS compliant, halogen free, and has Pb-free terminal plating. It is available in tape and reel packaging with standard quantities of 2500 on a 13-inch reel and 250 on a 7-inch reel.