CSD17579Q3AT This is a 30V N-channel MOSFET from Texas Instruments with a maximum drain current of 20A and on-resistance of 10.2mΩ at 10V gate drive. It is available in an SON 3.3mm x 3.3mm package.
Mfr Part #:

CSD17579Q3AT

Available from 1 distributors
Mfr Name: Texas Instruments
Texas Instruments
This is a 30V N-channel MOSFET from Texas Instruments with a maximum drain current of 20A and on-resistance of 10.2mΩ at 10V gate drive. It is available in an SON 3.3mm x 3.3mm package.
✓ Total Stock: 20 pcs
$ Price Range: $0.68 - $2.11

CSD17579Q3AT Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
20 pcs
20 pcs On Request 1 On Request On Request 21+ On Request On Request

CSD17579Q3AT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD17579Q3AT Description

Short technical summary and product information.

The CSD17579Q3AT is a 30V N-channel power MOSFET from Texas Instruments, part of the NexFET family. It features a low on-resistance of 10.2mΩ (maximum) at VGS=10V and 14.2mΩ at VGS=4.5V, making it suitable for high-efficiency power conversion. The device is rated for a continuous drain current of 20A at 25°C ambient, with a silicon-limited current of 39A at TC=25°C.

 

The MOSFET offers low gate charge (5.3nC typical) and low gate-drain charge (1.2nC typical), which reduces switching losses and enables high-frequency operation. It has a logic-level gate drive capability, allowing direct interfacing with low-voltage control circuits. The operating temperature range is -55°C to 150°C, and the device is avalanche rated.

 

The CSD17579Q3AT is housed in a compact SON 3.3mm x 3.3mm plastic package (8-lead VSONP), which provides low thermal resistance and saves board space. It is Pb-free, RoHS compliant, and halogen-free, meeting environmental standards. The device is designed for power conversion applications such as DC/DC converters, load switching, and other low-voltage switching circuits.

CSD17579Q3AT Quick Information

Product Type: MOSFET
Canonical Name: 30V N-Channel Power MOSFET
Subcategory: Single N-Channel MOSFET

CSD17579Q3AT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant

CSD17579Q3AT Estimated Pricing

Qty Low High
1+ $2.11 $2.11
10+ $1.34 $1.34
50+ $1.01 $1.01
100+ $0.85 $0.85
250+ $0.79 $0.79
750+ $0.68 $0.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD17579Q3AT Features

  • 30V drain-source voltage rating.
  • 20A continuous drain current.
  • 10.2mΩ on-resistance at 10V.
  • Low gate charge of 5.3nC typical.
  • RoHS compliant and halogen-free.

CSD17579Q3AT Applications

  • Designed for power conversion applications.
  • Suitable for logic-level gate drive.
  • Ideal for DC/DC switching regulators.
  • Minimizes conduction and switching losses.

CSD17579Q3AT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30V.

What is the package type?

SON 3.3mm x 3.3mm (8-lead VSONP).

What is the operating temperature range?

-55°C to 150°C.

Is this device RoHS compliant?

Yes, RoHS compliant and halogen-free.

What is the on-resistance at VGS=10V?

10.2mΩ maximum.

What is the typical gate charge?

5.3nC typical.

What is the continuous drain current rating?

20A at 25°C ambient, 39A silicon limited at 25°C case.

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