CSD17579Q3A 30V N-Channel MOSFET from Texas Instruments, rated for 20A drain current, with low on-resistance of 10.2mΩ at 10V gate drive. Housed in an 8-PowerVDFN surface mount package.
Mfr Part #:

CSD17579Q3A

Available from 4 distributors
Mfr Name: Texas Instruments
Texas Instruments
30V N-Channel MOSFET from Texas Instruments, rated for 20A drain current, with low on-resistance of 10.2mΩ at 10V gate drive. Housed in an 8-PowerVDFN surface mount package.
✓ Total Stock: 15,506 pcs
$ Price Range: $0.20 - $0.93

CSD17579Q3A Available from 4 distributors

✓ Authorised
✓ Non-Authorised
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7,971 pcs
7971 pcs On Request 1 On Request On Request 20+ On Request On Request
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6,183 pcs
6183 pcs On Request 1 On Request On Request 21+ On Request On Request
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1,321 pcs
1321 pcs On Request 1 On Request On Request On Request On Request On Request
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31 pcs
31 pcs On Request 1 On Request On Request On Request On Request On Request

CSD17579Q3A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD17579Q3A Description

Short technical summary and product information.

The CSD17579Q3A is a 30V N-Channel MOSFET from Texas Instruments, designed for power conversion applications. It features a low on-resistance of 10.2mΩ (max) at 10V gate drive and 14.2mΩ at 4.5V, making it suitable for high-efficiency switching. The device supports logic-level gate drive for operation at 4.5V and 10V, and is avalanche rated for robustness.

 

With a drain current rating of 20A (package limited) and 39A at TC=25°C (silicon limited), the MOSFET can handle high currents. The gate charge is only 5.3nC typical, enabling fast switching transitions. The device is available in a surface-mount 8-PowerVDFN (3.3mm x 3.3mm) package, which offers low thermal resistance.

 

This MOSFET is part of TI's NexFET family, known for low Qg and Qgd, low Rds(on), and low thermal resistance. It is Pb-free, RoHS compliant, and halogen free, meeting modern environmental requirements. Typical applications include DC/DC converters, load switches, and other power management circuits.

CSD17579Q3A Quick Information

Product Type: MOSFET
Canonical Name: 30V N-Channel NexFET Power MOSFET
Subcategory: Single N-Channel MOSFET

CSD17579Q3A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

CSD17579Q3A Estimated Pricing

Qty Low High
1+ $0.93 $0.93
10+ $0.58 $0.58
50+ $0.43 $0.43
100+ $0.38 $0.38
500+ $0.29 $0.29
2,500+ $0.23 $0.23
7,500+ $0.20 $0.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD17579Q3A Features

  • Low on-resistance: 10.2mΩ at 10V.
  • Logic level gate drive at 4.5V.
  • Avalanche rated for ruggedness.
  • Low gate charge of 5.3nC.
  • Surface mount in 8-PowerVDFN package.

CSD17579Q3A Applications

  • Designed for power conversion applications.
  • Used in DC/DC converter stages.
  • Suitable for load switching circuits.
  • Ideal for high-efficiency power supplies.

CSD17579Q3A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the CSD17579Q3A?

30V.

What is the maximum drain current?

20A at ambient temperature, 39A at TC=25°C.

What is the on-resistance at 4.5V gate drive?

14.2mΩ max.

What is the operating temperature range?

-55°C to 150°C.

Is this MOSFET RoHS compliant?

RoHS3 compliant per existing data.

What package is the CSD17579Q3A available in?

8-PowerVDFN (8-VSONP 3.3mm x 3.3mm).

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