| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,603 pcs
|
12603 pcs | On Request | 1 | On Request | On Request | 17+7 | On Request | On Request | |
|
7,235 pcs
|
7235 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,874 pcs
|
1874 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
338 pcs
|
338 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD17573Q5B is a 30V N-Channel NexFET power MOSFET from Texas Instruments, designed for high-efficiency power conversion applications. It features a maximum drain-source on-resistance of 1mΩ at VGS=10V and 1.45mΩ at VGS=4.5V, enabling low conduction losses. The device supports a continuous drain current of 100A at Ta=25°C and is silicon limited to 332A at Tc=25°C.
With a typical gate charge of 49nC and input capacitance of 9000pF, the MOSFET offers fast switching performance. It is a logic level device with gate threshold voltage typically 1.4V and maximum 1.8V, allowing direct drive from low-voltage logic. The operating junction temperature range is -55°C to 150°C.
The CSD17573Q5B is housed in an 8-PowerTDFN package (8-VSON-CLIP 5x6 mm) with surface mount mounting. It is avalanche rated, has low thermal resistance, and is lead-free terminal plated, RoHS compliant, and halogen free per manufacturer. The NexFET technology provides ultra-low RDS(on) and low Qg/Qgd for improved efficiency in DC-DC converters, power management, and load switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.34 | $2.34 |
| 10+ | $1.50 | $1.50 |
| 50+ | $1.14 | $1.14 |
| 100+ | $1.02 | $1.02 |
| 500+ | $0.81 | $0.81 |
| 2,500+ | $0.67 | $0.67 |
| 7,500+ | $0.61 | $0.61 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-PowerTDFN (8-VSON-CLIP 5x6 mm).
-55°C to 150°C (junction).
The manufacturer states RoHS compliant and halogen free.
100A continuous at Ta=25°C; silicon limited to 332A at Tc=25°C.
1mΩ maximum at VGS=10V, ID=35A; 1.45mΩ at VGS=4.5V.
49nC typical.