| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
85,633 pcs
|
85633 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
27,815 pcs
|
27815 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,232 pcs
|
3232 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,738 pcs
|
1738 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
13 pcs
|
13 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD17556Q5B is a 30V N-Channel NexFET power MOSFET from Texas Instruments, designed for low-loss power conversion applications. It offers a maximum drain-source on-resistance of 1.4 mOhm at Vgs=10V and 1.8 mOhm at Vgs=4.5V, enabling high efficiency in synchronous rectification and other switching topologies.
The device is rated for a continuous drain current of 100A at case temperature (Tc) and 34A at ambient temperature (Ta), with a silicon-limited current capability of 215A at Tc=25°C. It features a typical gate charge of 28.5 nC and low gate-drain charge (Qgd typ 6.9 nC) for fast switching. The MOSFET is logic-level compatible and operates over a junction temperature range of -55°C to 150°C.
The CSD17556Q5B is housed in an 8-PowerTDFN package (8-VSON-CLIP 5x6 mm) with surface mount mounting. It is lead-free, halogen-free, and RoHS compliant. The device is avalanche rated and designed for low thermal resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.32 | $3.32 |
| 10+ | $2.16 | $2.16 |
| 50+ | $1.66 | $1.66 |
| 100+ | $1.49 | $1.49 |
| 500+ | $1.21 | $1.21 |
| 2,500+ | $1.02 | $1.02 |
| 7,500+ | $0.96 | $0.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30 V.
The maximum Rds(on) is 1.4 mOhm at Vgs=10V and 1.8 mOhm at Vgs=4.5V.
The operating junction temperature range is -55°C to 150°C.
Yes, the CSD17556Q5B is RoHS3 compliant.
The CSD17556Q5B is available in an 8-PowerTDFN package (8-VSON-CLIP 5x6 mm) for surface mount mounting.
The continuous drain current is 100 A at case temperature (Tc) and 34 A at ambient temperature (Ta). The silicon-limited current at Tc=25°C is 215 A.