| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,246 pcs
|
7246 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
4,750 pcs
|
4750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD17527Q5A is a 30V N-Channel NexFET power MOSFET from Texas Instruments, designed for high-efficiency power conversion. It features a maximum drain current of 65A at case temperature 25°C and a low maximum on-resistance of 10.8mOhm at VGS=10V and 11A drain current, with 15.5mOhm at VGS=4.5V. The device supports logic-level gate drive with a typical threshold voltage of 1.6V and a maximum of 2V at 250µA.
This MOSFET offers low gate charge characteristics, with a typical total gate charge of 2.8nC and a maximum of 3.4nC at 4.5V gate drive, enabling fast switching and reduced switching losses. The gate-drain charge is 0.8nC typical and gate-source charge is 1.2nC typical. Input capacitance is 506pF maximum at VDS=15V. The device is avalanche rated and features low thermal resistance for improved power dissipation.
The CSD17527Q5A is housed in a surface-mount 8-PowerTDFN package (also known as 8-VSONP 5x6), with a package area of 29.4mm². It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 3W at ambient temperature. The package features Pb-free terminal plating and is halogen free.
This NexFET power MOSFET is suitable for power conversion applications where minimizing conduction and switching losses is critical. Its logic-level gate drive capability allows direct interfacing with low-voltage control circuits. The device is rated as Catalog grade for general-purpose use.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.71 | $1.71 |
| 10+ | $1.08 | $1.08 |
| 50+ | $0.81 | $0.81 |
| 100+ | $0.72 | $0.72 |
| 500+ | $0.57 | $0.57 |
| 2,500+ | $0.46 | $0.46 |
| 7,500+ | $0.41 | $0.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30V.
The maximum drain current is 65A at case temperature 25°C.
The maximum on-resistance is 10.8mOhm at VGS=10V and 11A drain current, and 15.5mOhm at VGS=4.5V.
The operating junction temperature range is -55°C to 150°C.
The CSD17527Q5A comes in a surface-mount 8-PowerTDFN package, also known as 8-VSONP (5x6), with a package area of 29.4mm².
The CSD17527Q5A is listed as RoHS3 compliant, though this is unverified and should be confirmed with the manufacturer.
The typical total gate charge is 2.8nC, with a maximum of 3.4nC at VGS=4.5V. Gate-drain charge is 0.8nC typical and gate-source charge is 1.2nC typical.