| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
23 pcs
|
23 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Footprint | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Height | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD17382F4 is a 30V N-Channel NexFET power MOSFET from Texas Instruments, designed for space-constrained handheld and mobile applications. It delivers a continuous drain current of 2.3A (silicon and package limited) with a maximum on-resistance of 67mΩ at VGS=4.5V and 82mΩ at VGS=2.5V.
This logic-level MOSFET features a typical gate threshold voltage of 0.9V, enabling direct drive from low-voltage logic. It offers low gate charge (2.1nC typical total) and low input capacitance (347pF maximum), supporting efficient switching in high-frequency circuits. Integrated ESD protection diodes provide rated immunity of 3kV HBM and 2kV CDM.
The device is housed in an ultra-compact 3-PICOSTAR (3-XFDFN) surface-mount package with a 0402 case size, a footprint of just 0.657225mm², and a low profile of 0.36mm. It is rated for operation from -55°C to 150°C junction temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.47 | $0.47 |
| 10+ | $0.29 | $0.29 |
| 50+ | $0.21 | $0.21 |
| 100+ | $0.18 | $0.18 |
| 500+ | $0.14 | $0.14 |
| 3,000+ | $0.10 | $0.10 |
| 9,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30V.
The continuous drain current is 2.3A at 25°C ambient temperature, limited by both silicon and package.
The maximum on-resistance is 67mΩ at VGS=4.5V and ID=500mA.
It is available in a 3-PICOSTAR (3-XFDFN) surface-mount package with a 0402 case size.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant and lead-free.
Yes, it has integrated ESD protection diodes rated for 3kV HBM and 2kV CDM.