| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
212,706 pcs
|
212706 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
4,952 pcs
|
4952 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,952 pcs
|
4952 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,747 pcs
|
3747 pcs | On Request | 1 | On Request | On Request | 21 | On Request | On Request | |
|
2,645 pcs
|
2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,640 pcs
|
2640 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
998 pcs
|
998 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
275 pcs
|
275 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD17313Q2 is a 30V N-Channel NexFET power MOSFET from Texas Instruments, designed for efficient power conversion in space-constrained applications. This single MOSFET offers a maximum drain current of 5A (package limited) and a low on-resistance of 32 mOhm at VGS=4.5V, with a typical gate threshold voltage of 1.3V.
Optimized for 5V gate drive applications, the device features ultra-low gate charge (typical 2.1 nC) and gate-drain charge (typical 0.4 nC), enabling fast switching and reduced switching losses. The logic-level gate threshold allows direct drive from low-voltage logic.
The MOSFET is housed in a compact 6-WSON (2mm x 2mm) surface-mount package with an exposed pad for enhanced thermal performance. It supports an operating temperature range of -55°C to 150°C and is rated for a maximum power dissipation of 2.3W at ambient temperature.
Typical applications include DC-DC converters, battery management, and load management systems where high efficiency and small footprint are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.80 | $0.80 |
| 10+ | $0.50 | $0.50 |
| 50+ | $0.36 | $0.36 |
| 100+ | $0.32 | $0.32 |
| 500+ | $0.24 | $0.24 |
| 3,000+ | $0.19 | $0.19 |
| 9,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30 V.
The package-limited maximum drain current is 5 A at Tc=25°C. The silicon-limited maximum drain current is 19 A at TC=25°C.
The maximum on-resistance is 32 mΩ at VGS=4.5V and 30 mΩ at Id=4A, Vgs=8V.
The operating temperature range is -55°C to 150°C.
The CSD17313Q2 is available in a 6-WDFN exposed pad package, also referred to as 6-WSON (2x2 mm).
The CSD17313Q2 is listed as RoHS3 Compliant, but this status is unverified and should be confirmed from an official source.
The typical total gate charge is 2.1 nC at VGS=4.5V.