CSD17309Q3 Texas Instruments CSD17309Q3 30V N-Channel NexFET power MOSFET with 6.3 mOhm on-resistance, 60A continuous drain current, and surface mount 8-VSON package.
Mfr Part #:

CSD17309Q3

Available from 4 distributors
Mfr Name: Texas Instruments
Texas Instruments
Texas Instruments CSD17309Q3 30V N-Channel NexFET power MOSFET with 6.3 mOhm on-resistance, 60A continuous drain current, and surface mount 8-VSON package.
✓ Total Stock: 46,861 pcs
$ Price Range: $0.44 - $1.78

CSD17309Q3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

CSD17309Q3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD17309Q3 Description

Short technical summary and product information.

The CSD17309Q3 is a 30V N-Channel NexFET power MOSFET from Texas Instruments designed for high-efficiency power conversion. It features a low on-resistance of 6.3 mOhm maximum at Vgs=4.5V and supports continuous drain currents up to 60A at TC=25°C (silicon and package limited).

 

The device is optimized for 5V gate drive applications and offers ultra-low gate charge (Qg typ 7.5 nC) and gate-drain charge (Qgd typ 1.7 nC), enabling fast switching with reduced losses. It includes avalanche rating, logic level gate drive, and a typical gate threshold voltage of 1.2V.

 

The MOSFET is supplied in an 8-pin VSON-CLIP (DQG) package measuring 3.3mm x 3.3mm with a surface mount design. It is lead-free, halogen-free, and RoHS compliant, suitable for notebook point-of-load, networking, telecom, and computing systems synchronous buck converters.

CSD17309Q3 Quick Information

Product Type: Power MOSFET
Series: NexFET
Canonical Name: CSD17309Q3 30V N-Channel NexFET Power MOSFET
Subcategory: Single N-Channel

CSD17309Q3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

CSD17309Q3 Estimated Pricing

Qty Low High
1+ $1.78 $1.78
10+ $1.13 $1.13
50+ $0.85 $0.85
100+ $0.76 $0.76
500+ $0.60 $0.60
2,500+ $0.49 $0.49
7,500+ $0.44 $0.44

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD17309Q3 Features

  • 30V drain-source voltage rating.
  • 6.3 mOhm max on-resistance at 4.5V.
  • 60A continuous drain current at TC=25°C.
  • Ultra-low gate charge Qg typ 7.5 nC.
  • Avalanche rated and logic level capable.

CSD17309Q3 Applications

  • Notebook point-of-load converters.
  • Synchronous buck for networking systems.
  • Telecom and computing power stages.
  • High-efficiency DC/DC converters.

CSD17309Q3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the CSD17309Q3?

The VDS rating is 30 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 60 A at TC=25°C (silicon and package limited).

What is the on-resistance at 4.5V gate drive?

The maximum Rds(on) at VGS=4.5 V is 6.3 mΩ.

What package does the CSD17309Q3 come in?

It is supplied in an 8-PowerTDFN / 8-VSON-CLIP (3.3 mm × 3.3 mm) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the CSD17309Q3 RoHS compliant?

The part is marked as RoHS3 Compliant and REACH unaffected, with lead-free and halogen-free terminal plating.

What is the typical gate charge?

The typical total gate charge (Qg) is 7.5 nC.

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