| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
124,690 pcs
|
124690 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,772 pcs
|
7772 pcs | On Request | 1 | On Request | On Request | 1941+ | On Request | On Request | |
|
3,235 pcs
|
3235 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,337 pcs
|
1337 pcs | On Request | 1 | On Request | On Request | 2129 | On Request | On Request | |
|
218 pcs
|
218 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
136 pcs
|
136 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
76 pcs
|
76 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
22 pcs
|
22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD17308Q3 is a 30V N-Channel NexFET power MOSFET from Texas Instruments, designed for power conversion applications. It is optimized for 5V gate drive and offers ultra-low gate charge (3.9nC typical) and gate-drain charge (0.8nC typical) for efficient high-frequency switching.
Key electrical specifications include a drain-to-source voltage rating of 30V, continuous drain current of 14A at 25°C ambient (44A at case temperature), and maximum on-resistance of 10.3mΩ at 10A/8V (11.8mΩ at Vgs=4.5V). The device is logic level compatible with a typical gate threshold voltage of 1.3V. Input capacitance is 700pF maximum at Vds=15V.
The MOSFET is housed in an 8-VSON-CLIP (3.3mm x 3.3mm) surface mount package, which provides low thermal resistance. It is avalanche rated and operates over a temperature range of -55°C to 150°C. The device is RoHS3 compliant, halogen free, and has lead-free terminal plating.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.52 | $1.52 |
| 10+ | $0.96 | $0.96 |
| 50+ | $0.71 | $0.71 |
| 100+ | $0.63 | $0.63 |
| 500+ | $0.50 | $0.50 |
| 2,500+ | $0.40 | $0.40 |
| 7,500+ | $0.36 | $0.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 30V.
It is available in an 8-VSON-CLIP (3.3mm x 3.3mm) surface mount package, also known as 8-PowerTDFN.
The operating temperature range is -55°C to 150°C (junction).
The manufacturer states it is RoHS3 compliant, though this is unverified from a document.
The continuous drain current is 14A at 25°C ambient (Ta) and 44A at 25°C case temperature (Tc).
The typical gate threshold voltage (Vgs(th)) is 1.3V, with a maximum of 1.8V at Id=250µA.
The maximum on-resistance is 10.3mΩ at Id=10A, Vgs=8V, and 11.8mΩ at Vgs=4.5V.