| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
45,042 pcs
|
45042 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,546 pcs
|
6546 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
1,589 pcs
|
1589 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
80 pcs
|
80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD17303Q5 is a 30V N-Channel NexFET power MOSFET from Texas Instruments, designed for low-loss power conversion. It features a maximum drain-source voltage of 30V and continuous drain current of 100A at case temperature 25°C (silicon limited) and 32A at ambient temperature 25°C. The device offers ultra-low on-resistance: 2.4mOhm typical at VGS=8V and 2.6mOhm maximum at VGS=4.5V, making it suitable for high-efficiency switching applications.
The MOSFET is optimized for 5V gate drive and features low gate charge (typical 18nC at VGS=4.5V) and low gate-drain charge (4nC typical), reducing switching losses. It is avalanche rated and has logic-level gate threshold voltage (typical 1.1V, maximum 1.6V). The device is housed in a compact 8-PowerTDFN package (SON 5mm x 6mm) with supplier package 8-VSON-CLIP, suitable for surface mount assembly.
Typical applications include notebook point-of-load converters, synchronous buck converters in networking, telecom, and computing systems. The NexFET technology provides low thermal resistance and high efficiency in power management designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.65 | $2.65 |
| 10+ | $1.71 | $1.71 |
| 50+ | $1.30 | $1.30 |
| 100+ | $1.17 | $1.17 |
| 500+ | $0.93 | $0.93 |
| 2,500+ | $0.78 | $0.78 |
| 7,500+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
It comes in an 8-PowerTDFN package (SON 5mm x 6mm) with supplier package 8-VSON-CLIP.
-55°C to 150°C (junction temperature).
It is listed as RoHS3 Compliant, but this status is unverified. The manufacturer page indicates RoHS Compliant and Halogen Free.
Maximum gate charge is 23nC at VGS=4.5V; typical is 18nC.
Maximum on-resistance is 2.4mOhm at VGS=8V, ID=25A, and 2.6mOhm at VGS=4.5V.
100A at case temperature 25°C (silicon limited) and 32A at ambient temperature 25°C.