CSD17301Q5A The CSD17301Q5A is a 30V N-Channel NexFET power MOSFET from Texas Instruments, rated for 28A at ambient and 100A at case temperature. It features low on-resistance of 3mΩ at 4.5V gate drive.
Mfr Part #:

CSD17301Q5A

Available from 2 distributors
Mfr Name: Texas Instruments
Texas Instruments
The CSD17301Q5A is a 30V N-Channel NexFET power MOSFET from Texas Instruments, rated for 28A at ambient and 100A at case temperature. It features low on-resistance of 3mΩ at 4.5V gate drive.
✓ Total Stock: 157,929 pcs
$ Price Range: $0.67 - $2.54

CSD17301Q5A Available from 2 distributors

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✓ Non-Authorised
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106,272 pcs
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CSD17301Q5A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD17301Q5A Description

Short technical summary and product information.

The CSD17301Q5A is an N-channel power MOSFET from Texas Instruments, belonging to the NexFET family. It is designed for 30V drain-source voltage (VDS) and supports a continuous drain current of 28A at 25°C ambient temperature and 100A at 25°C case temperature.

 

The device has a maximum drain-source on-resistance of 2.6mΩ at VGS=8V and 25A drain current, and 3mΩ at VGS=4.5V. Gate threshold voltage is typically 1.1V and maximum 1.55V at ID=250µA. Total gate charge is 19nC typical at VGS=10V and 25nC maximum at VGS=4.5V, with low QGD of 4.3nC and QGS of 5.7nC typical.

 

The NexFET design is optimized for 5V gate drive applications, features ultra-low gate charge, and is avalanche rated. Input capacitance is 3480pF maximum at VDS=15V. The device operates over a junction temperature range of -55°C to 150°C with maximum power dissipation of 3.2W at 25°C ambient.

 

This MOSFET is available in a surface-mount 8-PowerTDFN package (supplier device package 8-VSONP 5x6mm), suitable for space-constrained power management circuits. It is listed as lead-free, halogen-free, and RoHS3 compliant.

CSD17301Q5A Quick Information

Product Type: N-Channel Power MOSFET
Series: NexFET
Canonical Name: 30-V N-Channel NexFET Power MOSFET, Single SON 5mm x 6mm, 3mΩ
Subcategory: Power MOSFET

CSD17301Q5A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

CSD17301Q5A Estimated Pricing

Qty Low High
1+ $2.54 $2.54
10+ $1.63 $1.63
50+ $1.24 $1.24
100+ $1.11 $1.11
500+ $0.89 $0.89
2,500+ $0.74 $0.74
7,500+ $0.67 $0.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD17301Q5A Features

  • 30V drain-source voltage rating.
  • 100A drain current at case temperature.
  • Low on-resistance: 2.6mΩ at VGS=8V.
  • Optimized for 5V gate drive.
  • Avalanche rated with low gate charge.

CSD17301Q5A Applications

  • Point-of-load converters in notebook computers.
  • Synchronous buck for networking and telecom.
  • Computing system power delivery.

CSD17301Q5A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the CSD17301Q5A?

The CSD17301Q5A has a maximum drain-to-source voltage (VDS) of 30 V.

What is the package type and mounting style?

The device comes in an 8-PowerTDFN package (also known as 8-VSONP 5x6mm) and is designed for surface-mount installation.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the CSD17301Q5A RoHS compliant?

The part is listed as RoHS3 compliant, lead-free, and halogen-free in the product database.

What are the drain current ratings?

Continuous drain current is 28A at 25°C ambient temperature and 100A at 25°C case temperature.

What is the on-resistance and at what gate drive?

Maximum on-resistance is 2.6mΩ at VGS=8V, ID=25A, and 3mΩ at VGS=4.5V.

Is the device optimized for low-voltage gate drive?

Yes, it is optimized for 5V gate drive with logic-level threshold voltage.

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