| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,952 pcs
|
2952 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,096 pcs
|
1096 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD16570Q5B is a 25V N-Channel NexFET power MOSFET from Texas Instruments, designed for ORing and hot swap applications where minimizing resistance is critical. It features an extremely low on-resistance of 0.59 mOhm (max) at Vgs=10V and 0.82 mOhm at Vgs=4.5V, enabling high-efficiency power paths.
This device supports a continuous drain current of 100A (package-limited) and up to 456A silicon-limited at Tc=25°C. It offers a typical gate charge of 95 nC and a maximum input capacitance of 14000 pF at Vds=12V, contributing to fast switching performance. The MOSFET is avalanche rated and logic level compatible, with a gate threshold voltage of 1.5V typical.
The CSD16570Q5B is housed in an 8-PowerTDFN package (8-VSON-CLIP, 5x6 mm) and is surface mountable. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 195W at Tc=25°C. The package features low thermal resistance for effective heat management.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.15 | $3.15 |
| 10+ | $2.04 | $2.04 |
| 50+ | $1.56 | $1.56 |
| 100+ | $1.40 | $1.40 |
| 500+ | $1.13 | $1.13 |
| 2,500+ | $0.88 | $0.88 |
| 7,500+ | $0.82 | $0.82 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 25V.
The maximum on-resistance is 0.59 mOhm at Vgs=10V and 0.82 mOhm at Vgs=4.5V.
The operating junction temperature range is -55°C to 150°C.
The manufacturer page indicates RoHS compliant and halogen free, but this is unverified. Please confirm with official documentation.
The CSD16570Q5B is available in an 8-PowerTDFN package (8-VSON-CLIP, 5x6 mm) for surface mount.
The package-limited continuous drain current is 100A at Ta=25°C, while the silicon-limited current is 456A at Tc=25°C.
The typical total gate charge (Qg) is 95 nC at Vgs=10V, with Qgd of 31 nC and Qgs of 29 nC.