CSD16556Q5B CSD16556Q5B is a 25V N-Channel NexFET power MOSFET from Texas Instruments, rated for 100A drain current with a maximum on-resistance of 1.07 mΩ at 10V gate drive. It comes in a surface-mount 8-VSONP (5x6 mm) package.
Mfr Part #:

CSD16556Q5B

Available from 2 distributors
Mfr Name: Texas Instruments
Texas Instruments
CSD16556Q5B is a 25V N-Channel NexFET power MOSFET from Texas Instruments, rated for 100A drain current with a maximum on-resistance of 1.07 mΩ at 10V gate drive. It comes in a surface-mount 8-VSONP (5x6 mm) package.
✓ Total Stock: 18,495 pcs
$ Price Range: $1.03 - $3.50

CSD16556Q5B Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
18,395 pcs
18395 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
100 pcs
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CSD16556Q5B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD16556Q5B Description

Short technical summary and product information.

The CSD16556Q5B is a 25V N-channel power MOSFET from Texas Instruments, part of the NexFET family. It offers a maximum drain-to-source voltage of 25V and a package-limited drain current of 100A (silicon-limited to 263A at TC=25°C). The device features an ultra-low maximum on-resistance of 1.07 mΩ at VGS=10V and 1.5 mΩ at VGS=4.5V, making it suitable for high-efficiency power conversion.

 

With a typical gate charge of 37 nC and a maximum input capacitance of 6180 pF at VDS=15V, the CSD16556Q5B enables fast switching and low gate-drive losses. The gate threshold voltage is typically 1.4V (maximum 1.7V), and the device supports logic-level gate drive from 4.5V to 10V. Maximum power dissipation is 191W at TC=25°C and 3.2W at TA=25°C. The operating junction temperature range extends from -55°C to 150°C.

 

The MOSFET is housed in a VSON-CLIP (DNK) 8 package measuring 6 mm × 5 mm (also known as 8-VSONP 5×6) for surface-mount assembly. The package offers low thermal resistance and is avalanche rated. This device is RoHS3 compliant, lead-free, and halogen-free.

 

This power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

CSD16556Q5B Quick Information

Product Type: N-Channel MOSFET
Series: NexFET
Canonical Name: CSD16556Q5B 25-V N-Channel NexFET Power MOSFET
Subcategory: Single N-Channel MOSFET

CSD16556Q5B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Pb Free Terminal Plating

CSD16556Q5B Estimated Pricing

Qty Low High
1+ $3.50 $3.50
10+ $2.28 $2.28
50+ $1.75 $1.75
100+ $1.58 $1.58
500+ $1.29 $1.29
2,500+ $1.09 $1.09
7,500+ $1.03 $1.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD16556Q5B Features

  • 25V N-channel NexFET power MOSFET.
  • 1.07 mΩ maximum on-resistance at 10V.
  • 100A package-limited drain current.
  • Logic-level gate drive at 4.5V and 10V.
  • RoHS3, lead-free, and halogen-free compliant.

CSD16556Q5B Applications

  • Used in synchronous rectification circuits.
  • Ideal for high-efficiency DC/DC converters.
  • Suitable for low-voltage power management.
  • Well-suited for high-current switching applications.

CSD16556Q5B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the CSD16556Q5B?

The drain-to-source voltage (Vds) is rated at 25V.

What is the package type of this MOSFET?

The CSD16556Q5B comes in a VSON-CLIP (DNK) 8 package, measuring 6 mm × 5 mm, also known as 8-VSONP (5x6).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the CSD16556Q5B RoHS compliant?

Yes, it is RoHS3 compliant, lead-free, and halogen-free.

What is the maximum drain current of the CSD16556Q5B?

The package-limited drain current is 100A at TC=25°C; the silicon-limited current is 263A.

What is the on-resistance at 10V gate drive?

The maximum on-resistance is 1.07 mΩ at VGS=10V and ID=30A.

What is the gate charge of the CSD16556Q5B?

The typical gate charge is 37 nC, with Qgd of 13 nC and Qgs of 12 nC.

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