| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
66,733 pcs
|
66733 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,768 pcs
|
6768 pcs | On Request | 1 | On Request | On Request | 2031+5 | On Request | On Request | |
|
1,238 pcs
|
1238 pcs | On Request | 1 | On Request | On Request | 1609+5 | On Request | On Request | |
|
1,110 pcs
|
1110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD16410Q5A is an N-channel power MOSFET from Texas Instruments, part of the NexFET family, designed for high-efficiency power conversion. It has a drain-to-source voltage rating of 25V, a gate-to-source rating of 16V, and supports a continuous drain current of 59A at case temperature 25°C (16A at ambient 25°C). The MOSFET features ultra-low on-resistance: 8.5mΩ maximum at VGS=10V and 12mΩ maximum at VGS=4.5V, with a typical threshold voltage of 1.9V. It is logic-level compatible and requires drive voltages of 4.5V or 10V.
In terms of switching performance, the device has a typical total gate charge of 3.9nC with low gate-to-drain (1.1nC) and gate-to-source (1.8nC) charges, which helps reduce switching losses. The maximum input capacitance is 740pF at VDS=12.5V. Its maximum power dissipation is 3W at 25°C ambient temperature. The operating junction temperature range is -55°C to 150°C. The MOSFET is avalanche rated and designed for point-of-load synchronous buck converters in networking, telecom, and computing systems, and is optimized for control FET applications.
The part is housed in an 8-PowerTDFN surface-mount package (also designated VSONP (DQJ) 8) with a 5mm x 6mm footprint, and uses a Pb-free terminal plating. It is RoHS3 compliant and halogen free.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.40 | $1.40 |
| 10+ | $0.88 | $0.88 |
| 50+ | $0.65 | $0.65 |
| 100+ | $0.58 | $0.58 |
| 500+ | $0.45 | $0.45 |
| 2,500+ | $0.37 | $0.37 |
| 7,500+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDS) is 25V.
The maximum RDS(on) is 8.5mΩ at VGS=10V and 12mΩ at VGS=4.5V.
It supports up to 59A continuous drain current at case temperature 25°C, and 16A at ambient temperature 25°C.
The typical total gate charge is 3.9nC; maximum is 5nC at VGS=4.5V.
The operating junction temperature range is -55°C to 150°C.
It comes in an 8-PowerTDFN surface-mount package, also designated as VSONP (DQJ) 8, with supplier package size 8-VSONP (5x6).
Yes, it is RoHS3 compliant, halogen free, and has Pb-free terminal plating.