| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30,133 pcs
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30133 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The CSD16407Q5C is a 25V N-Channel NexFET Power MOSFET from Texas Instruments designed for low-loss power conversion. It features a maximum drain-source on-resistance of 2.4mΩ at Vgs = 10V and 2.5mΩ typical at Vgs = 4.5V, enabling efficient synchronous buck converter operation in networking, telecom, and computing systems. The device achieves a typical gate charge total of 13.3nC at Vgs = 4.5V, with a gate-to-drain charge of 3.5nC.
This MOSFET is avalanche rated with a single pulse avalanche energy of 218mJ. It supports a continuous drain current of 100A when the case is at 25°C, and 31A at the ambient condition (on a 1-inch² Cu pad on FR4). Pulsed drain current capability reaches 200A. The operating junction temperature range spans -55°C to 150°C.
The CSD16407Q5C is housed in a DualCool™ 8-PowerTDFN package (5mm × 6mm) with supplier device package designation 8-VSON-CLIP, optimized for two-sided cooling. It is RoHS compliant, halogen free, and has Pb-free terminal plating. The part is surface mount and supplied on tape and reel (2500 units per reel).
The maximum drain-source voltage is 25 V.
The continuous drain current is 31 A at an ambient temperature of 25°C, and 100 A when the case temperature is 25°C.
It comes in an 8-PowerTDFN surface mount package, also known as 8-VSON-CLIP (5x6).
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS compliant, halogen free, and has Pb-free terminal plating.
The typical gate charge total is 13.3 nC at Vgs = 4.5 V, with a gate-to-drain charge of 3.5 nC.
The maximum on-resistance is 2.4 mΩ at Id = 25 A, Vgs = 10 V; typical value is 1.8 mΩ.