CSD16407Q5C The CSD16407Q5C is an N-Channel NexFET Power MOSFET from Texas Instruments with a maximum drain-source voltage of 25V and continuous drain current of 31A at ambient (100A at case). It is offered in an 8-PowerTDFN (8-VSON-CLIP 5x6) surface-mount package.
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CSD16407Q5C

Available from 1 distributors
Mfr Name: Texas Instruments
Texas Instruments
The CSD16407Q5C is an N-Channel NexFET Power MOSFET from Texas Instruments with a maximum drain-source voltage of 25V and continuous drain current of 31A at ambient (100A at case). It is offered in an 8-PowerTDFN (8-VSON-CLIP 5x6) surface-mount package.
✓ Total Stock: 30,133 pcs

CSD16407Q5C Available from 1 distributor

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CSD16407Q5C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD16407Q5C Description

Short technical summary and product information.

The CSD16407Q5C is a 25V N-Channel NexFET Power MOSFET from Texas Instruments designed for low-loss power conversion. It features a maximum drain-source on-resistance of 2.4mΩ at Vgs = 10V and 2.5mΩ typical at Vgs = 4.5V, enabling efficient synchronous buck converter operation in networking, telecom, and computing systems. The device achieves a typical gate charge total of 13.3nC at Vgs = 4.5V, with a gate-to-drain charge of 3.5nC.

 

This MOSFET is avalanche rated with a single pulse avalanche energy of 218mJ. It supports a continuous drain current of 100A when the case is at 25°C, and 31A at the ambient condition (on a 1-inch² Cu pad on FR4). Pulsed drain current capability reaches 200A. The operating junction temperature range spans -55°C to 150°C.

 

The CSD16407Q5C is housed in a DualCool™ 8-PowerTDFN package (5mm × 6mm) with supplier device package designation 8-VSON-CLIP, optimized for two-sided cooling. It is RoHS compliant, halogen free, and has Pb-free terminal plating. The part is surface mount and supplied on tape and reel (2500 units per reel).

CSD16407Q5C Quick Information

Product Type: Power MOSFET
Canonical Name: Texas Instruments CSD16407Q5C N-Channel NexFET Power MOSFET, 25V, 31A/100A
Subcategory: Single MOSFETs

CSD16407Q5C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Pb Free

CSD16407Q5C Features

  • 25V maximum drain-source voltage rating.
  • Low 2.4mΩ maximum on-resistance at 10V.
  • 100A continuous drain current at case temperature 25°C.
  • Avalanche rated 218mJ single pulse.
  • RoHS compliant and halogen free package.

CSD16407Q5C Applications

  • Point-of-load synchronous buck converters.
  • Networking, telecom, and computing power supplies.
  • High-current synchronous FET applications.
  • Efficient power conversion in space-constrained designs.

CSD16407Q5C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the CSD16407Q5C?

The maximum drain-source voltage is 25 V.

What is the continuous drain current rating?

The continuous drain current is 31 A at an ambient temperature of 25°C, and 100 A when the case temperature is 25°C.

What is the package type of the CSD16407Q5C?

It comes in an 8-PowerTDFN surface mount package, also known as 8-VSON-CLIP (5x6).

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the CSD16407Q5C RoHS compliant?

Yes, it is RoHS compliant, halogen free, and has Pb-free terminal plating.

What is the typical gate charge of this MOSFET?

The typical gate charge total is 13.3 nC at Vgs = 4.5 V, with a gate-to-drain charge of 3.5 nC.

What is the on-resistance at Vgs = 10 V?

The maximum on-resistance is 2.4 mΩ at Id = 25 A, Vgs = 10 V; typical value is 1.8 mΩ.

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