| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
111,064 pcs
|
111064 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
65,745 pcs
|
65745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
31,632 pcs
|
31632 pcs | On Request | 1 | On Request | On Request | 1902+ | On Request | On Request | |
|
3,314 pcs
|
3314 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD16327Q3 is a 25V N-Channel NexFET power MOSFET from Texas Instruments, designed for high-efficiency power conversion. It features a maximum drain-to-source voltage of 25V and a drain current rating of 60A (package-limited) at 25°C. The device offers a low maximum on-resistance of 4.8mOhm at VGS=4.5V, making it suitable for applications requiring minimal conduction losses.
This MOSFET is optimized for 5V gate drive applications, with a typical gate threshold voltage of 1.2V and a maximum of 1.4V. It supports logic-level gate drive, enabling direct interfacing with low-voltage control circuits. The device has a maximum gate charge of 8.4nC at VGS=4.5V, contributing to efficient switching performance.
The CSD16327Q3 is housed in a compact 8-VSON-CLIP (3.3mm x 3.3mm) surface-mount package, offering low thermal resistance and a small footprint for space-constrained designs. It operates over a junction temperature range of -55°C to 150°C, ensuring reliable performance in demanding environments.
This product is RoHS compliant, halogen-free, and features lead-free terminal plating, aligning with modern environmental standards. It is avalanche-rated, providing robustness in applications where inductive loads may cause voltage spikes.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
| 10+ | $1.19 | $1.19 |
| 50+ | $0.90 | $0.90 |
| 100+ | $0.80 | $0.80 |
| 500+ | $0.63 | $0.63 |
| 2,500+ | $0.52 | $0.52 |
| 7,500+ | $0.46 | $0.46 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 25V.
The CSD16327Q3 is available in a surface-mount 8-VSON-CLIP (3.3mm x 3.3mm) package.
The operating temperature range is -55°C to 150°C (junction temperature).
Yes, the CSD16327Q3 is RoHS3 compliant and halogen-free.
The package-limited drain current is 60A at Tc=25°C, while the silicon-limited rating is 112A.
The maximum on-resistance is 4.8mOhm at VGS=4.5V.
Yes, the CSD16327Q3 is a logic-level MOSFET, supporting gate drive voltages as low as 3V.